Impurity ion implantation into silicon single crystals: efficiency and radiation damage
V.S. Vavilov a
A.R. Chelyadinskii b
a Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
b Department of Physics, Belarussian State University, prosp. F. Skoriny 4, Minsk, 220050, Belarus
The ion implantation method is analysed from the point of view of its efficiency as a technique for doping silicon with donor and acceptor impurities, for synthesising silicon-based compounds and for producing gettering layers and optoelectronic structures. The introduction, agglomeration, and annealing of radiation-produced defects in ion-implanted silicon are considered. The role of interstitial defects in radiation-related defect formation is estimated. Mechanisms of athermal migration of silicon atoms in the silicon lattice are analysed.