Raouf Z. Bakhtizin



Department of Physical Electronics, Bashkir State University
Address: Ufa, Russian Federation


Articles

  1. R.Z. Bakhtizin, Q.-Zh. Xue, Q.-K. Xue et alScanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growthPhys. Usp. 47 371–391 (2004)
  2. R.Z. Bakhtizin, T. Hashizume, Q.-K. Xue, T. Sakurai “Atomic structures on a GaAs(001) surface grown by molecular beam epitaxyPhys. Usp. 40 1175–1187 (1997)
  3. R.Z. Bakhtizin, T. Hashizume, Sh. Wang, T. Sakurai “Scanning tunneling microscopy of fullerenes on metal and semiconductor surfacesPhys. Usp. 40 275–290 (1997)

See also: T. Sakurai, Q.-K. Xue, T. Hashizume, Q.-Zh. Xue, K.-H. Wu, Sh. Wang, V.G. Valeev, Yu.A. Kukharenko

PACS: 61.14.Hg, 71.15.Nc, 81.05.Ea, 61.16.Di, 68.55.Bd, 68.35.Bs, 61.16.Ch, 61.46.+w, 68.65.+g

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