Toshio Sakurai



Institute for Materials Research, Tohoku University
Address: 2-1-1 Katahira, Sendai, 980-77, Japan


Articles

  1. R.Z. Bakhtizin, Q.-Zh. Xue, Q.-K. Xue et alScanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth47 371–391 (2004)
  2. R.Z. Bakhtizin, T. Hashizume, Q.-K. Xue, T. Sakurai “Atomic structures on a GaAs(001) surface grown by molecular beam epitaxy40 1175–1187 (1997)
  3. R.Z. Bakhtizin, T. Hashizume, Sh. Wang, T. Sakurai “Scanning tunneling microscopy of fullerenes on metal and semiconductor surfaces40 275–290 (1997)

See also: R.Z. Bakhtizin, Q.-K. Xue, T. Hashizume, Q.-Zh. Xue, K.-H. Wu, Sh. Wang

PACS: 61.14.Hg, 71.15.Nc, 81.05.Ea, 61.16.Di, 68.55.Bd, 68.35.Bs, 61.16.Ch, 61.46.+w, 68.65.+g,

© 1918–2019 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions