Issues

 / 

1997

 / 

March

  

Instruments and methods of investigation


Scanning tunneling microscopy of fullerenes on metal and semiconductor surfaces

 a,  b,  c,  c
a Department of Physical Electronics, Bashkir State University, Ufa, Russian Federation
b Hitachi Advanced Research Laboratory, Hitachi Ltd., Hatoyama, Saitama, Japan
c Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Sendai, 980-77, Japan

The current state of the ultra-high vacuum scanning tunneling microscopy (STM) of fullerene molecules is reviewed with the use of the authors’ work. We focus our work on absorption and reaction of the C60 and C70 fullerenes, separately or in mixture, with semiconductor [Si(111)-7×7 and Si(100)-2×1] and metal [Cu(111)-1×1 and Ag(111)-1×1] surfaces. By using the STM, the adsorption geometry and the corresponding reconstruction are directly observed on these surfaces, and the intramolecular structures are revealed in high resolution STM images which are analyzed theoretically within the local charge distribution model. Results on the ordered growth of fullerene films on metal and semiconductor surfaces are presented and discussed.

Text can be downloaded in Russian. English translation is available on IOP Science.
PACS: 68.35.Bs, 61.16.Ch, 61.46.+w, 68.65.+g (all)
DOI: 10.1070/PU1997v040n03ABEH000213
URL: https://ufn.ru/en/articles/1997/3/d/
Citation: Bakhtizin R Z, Hashizume T, Wang Sh, Sakurai T "Scanning tunneling microscopy of fullerenes on metal and semiconductor surfaces" Phys. Usp. 40 275–290 (1997)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Бахтизин Р З, Хашицуме Т, Вонг Ш, Сакурай Т «Сканирующая туннельная микроскопия фуллеренов на поверхности металлов и полупроводников» УФН 167 289–307 (1997); DOI: 10.3367/UFNr.0167.199703e.0289

© 1918–2019 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions