Qi-Kun Xue



Institute for Materials Research, Tohoku University
Address: 2-1-1 Katahira, Sendai, 980-77, Japan


Articles

  1. R.Z. Bakhtizin, Q.-Zh. Xue, Q.-K. Xue et alScanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth47 371–391 (2004)
  2. R.Z. Bakhtizin, T. Hashizume, Q.-K. Xue, T. Sakurai “Atomic structures on a GaAs(001) surface grown by molecular beam epitaxy40 1175–1187 (1997)

See also: T. Sakurai, R.Z. Bakhtizin, K.-H. Wu, Q.-Zh. Xue, T. Hashizume

PACS: 61.14.Hg, 71.15.Nc, 81.05.Ea, 61.16.Di, 68.55.Bd,

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