V.S. Vavilov



Lebedev Physical Institute, Russian Academy of Sciences
Address: Leninsky prosp. 53, Moscow, 119991, Russian Federation
Phone: +7 (499) 135 42 64
Fax: +7 (499) 135 78 80
Website:


Personalia

  1. N.G. Basov, V.L. Ginzburg, A.A. Gippius et alIn memory of Viktor Sergeevich VavilovPhys. Usp. 43 193–194 (2000)

Articles

  1. V.S. Vavilov, P.C. Euthymiou, G.E. Zardas “Persistent photoconductivity in semiconducting III-V compoundsPhys. Usp. 42 199–201 (1999)
  2. V.S. Vavilov “Handbook of industrial diamonds and diamond filmsPhys. Usp. 41 1045–1046 (1998)
  3. V.S. Vavilov “Atomic migration and related changes in defect concentration and structure due to electronic subsystem excitations in semiconductorsPhys. Usp. 40 387–392 (1997)
  4. V.S. Vavilov “Diamond in solid state electronicsPhys. Usp. 40 15–20 (1997)
  5. V.S. Vavilov “Handbook on the physical properties of Ge, Si, GaAs and InP byA Dargys and J KundrotasPhys. Usp. 39 757–757 (1996)
  6. V.S. Vavilov “Properties of diamond and diamond filmsPhys. Usp. 38 1058–1059 (1995)
  7. V.S. Vavilov “Semiconductors in the modern worldPhys. Usp. 38 555–558 (1995)
  8. V.S. Vavilov, A.R. Chelyadinskii “Impurity ion implantation into silicon single crystals: efficiency and radiation damagePhys. Usp. 38 333–343 (1995)
  9. V.S. Vavilov “Possibilities and limitations of ion implantation in diamond, and comparison with other doping methodsPhys. Usp. 37 407–411 (1994)
  10. V.S. Vavilov “Physics and applications of wide bandgap semiconductorsPhys. Usp. 37 269–277 (1994)
  11. V.S. Vavilov “The properties of natural and synthetic diamondPhys. Usp. 36 (11) 1083–1084 (1993)
  12. V.S. Vavilov “Some physical aspects of ion implantationSov. Phys. Usp. 28 196–206 (1985)
  13. V.S. Vavilov, E.A. Konorova “Semiconducting diamondsSov. Phys. Usp. 19 301–316 (1976)
  14. V.S. Vavilov, E.A. Konorova “Semiconductor DiamondsSov. Phys. Usp. 15 835–835 (1973)
  15. V.S. Vavilov “The nature and energy spectrum of radiation defects in semiconductorsSov. Phys. Usp. 7 797–808 (1965)
  16. V.S. Vavilov “Radiation ionization processes in germanium and silicon crystalsSov. Phys. Usp. 4 761–769 (1962)
  17. V.S. Vavilov “Radiative recombination in semiconductorsSov. Phys. Usp. 2 455–464 (1959)

Signed personalia

  1. Zh.I. Alferov, V.S. Vavilov, Yu.V. Gulyaev et alViktor Leopol’dovich Bonch-Bruevich (Obituary)Sov. Phys. Usp. 31 171–172 (1988)
  2. A.P. Aleksandrov, Zh.I. Alferov, N.G. Basov et alBentsion Moiseevich Vul (Obituary)Sov. Phys. Usp. 29 587–588 (1986)
  3. N.G. Basov, S.V. Bogdanov, V.S. Vavilov et alBentsion Moiseevich Vul (on his eightieth birthday)Sov. Phys. Usp. 26 462–463 (1983)
  4. V.S. Vavilov “Bentsion Moiseevich Vul (on the occasion of his sixtieth birthday)Sov. Phys. Usp. 6 606–608 (1964)

See also: V.L. Ginzburg, A.F. Andreev, L.V. Keldysh, G.A. Mesyats, A.N. Skrinskii, L.P. Pitaevskii, A.M. Prokhorov, Zh.I. Alferov, E.P. Velikhov, V.A. Matveev, V.A. Rubakov, E.L. Feinberg, B.B. Kadomtsev, A.S. Borovik-Romanov, Yu.A. Osip’yan

PACS: 72.20.Jv, 01.60.+q, 72.80.Ey, 72.80.Cw, 72.40.+w, 68.55.Ln, 85.30.-z, 71.55.Cn, 78.50.Ge, 77.22.Jp, 61.72.Ww, 01.10.Fv, 68.43.Mn, 82.65.+r, 81.15.Cd

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