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Issue 11, 2025
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V.S. Vavilov



Lebedev Physical Institute, Russian Academy of Sciences
Address: Leninsky prosp. 53, Moscow, 119991, Russian Federation
Phone: +7 (499) 135 42 64
Fax: +7 (499) 135 78 80
Website:


Personalia

  1. N.G. Basov, V.L. Ginzburg, A.A. Gippius et al “In memory of Viktor Sergeevich Vavilov” Phys. Usp. 43 193–194 (2000)

Articles

Citations
1 V.S. Vavilov, P.C. Euthymiou, G.E. Zardas “Persistent photoconductivity in semiconducting III-V compounds” Phys. Usp. 42 199–201 (1999) 12
2 V.S. Vavilov “Handbook of industrial diamonds and diamond films” Phys. Usp. 41 1045–1046 (1998) 1
3 V.S. Vavilov “Atomic migration and related changes in defect concentration and structure due to electronic subsystem excitations in semiconductors” Phys. Usp. 40 387–392 (1997) 19
4 V.S. Vavilov “Diamond in solid state electronics” Phys. Usp. 40 15–20 (1997) 18
5 V.S. Vavilov “Handbook on the physical properties of Ge, Si, GaAs and InP byA Dargys and J Kundrotas” Phys. Usp. 39 757–757 (1996) 7
6 V.S. Vavilov “Properties of diamond and diamond films” Phys. Usp. 38 1058–1059 (1995)
7 V.S. Vavilov “Semiconductors in the modern world” Phys. Usp. 38 555–558 (1995) 4
8 V.S. Vavilov, A.R. Chelyadinskii “Impurity ion implantation into silicon single crystals: efficiency and radiation damage” Phys. Usp. 38 333–343 (1995) 21
9 V.S. Vavilov “Possibilities and limitations of ion implantation in diamond, and comparison with other doping methods” Phys. Usp. 37 407–411 (1994) 12
10 V.S. Vavilov “Physics and applications of wide bandgap semiconductors” Phys. Usp. 37 269–277 (1994) 43
11 V.S. Vavilov “The properties of natural and synthetic diamond” Phys. Usp. 36 (11) 1083–1084 (1993) 9
12 V.S. Vavilov “Some physical aspects of ion implantation” Sov. Phys. Usp. 28 196–206 (1985) 6
13 V.S. Vavilov, E.A. Konorova “Semiconducting diamonds” Sov. Phys. Usp. 19 301–316 (1976) 37
14 V.S. Vavilov, E.A. Konorova “Semiconductor Diamonds” Sov. Phys. Usp. 15 835–835 (1973) 2
15 V.S. Vavilov “The nature and energy spectrum of radiation defects in semiconductors” Sov. Phys. Usp. 7 797–808 (1965) 15
16 V.S. Vavilov “Radiation ionization processes in germanium and silicon crystals” Sov. Phys. Usp. 4 761–769 (1962) 42
17 V.S. Vavilov “Radiative recombination in semiconductors” Sov. Phys. Usp. 2 455–464 (1959) 6

Signed personalia

  1. Zh.I. Alferov, V.S. Vavilov, Yu.V. Gulyaev et al “Viktor Leopol’dovich Bonch-Bruevich (Obituary)” Sov. Phys. Usp. 31 171–172 (1988)
  2. A.P. Aleksandrov, Zh.I. Alferov, N.G. Basov et al “Bentsion Moiseevich Vul (Obituary)” Sov. Phys. Usp. 29 587–588 (1986)
  3. N.G. Basov, S.V. Bogdanov, V.S. Vavilov et al “Bentsion Moiseevich Vul (on his eightieth birthday)” Sov. Phys. Usp. 26 462–463 (1983)
  4. V.S. Vavilov “Bentsion Moiseevich Vul (on the occasion of his sixtieth birthday)” Sov. Phys. Usp. 6 606–608 (1964)

254
V.S. Vavilov: total citation number of the papers published in Phys. Usp.

See also: V.L. Ginzburg, A.F. Andreev, L.V. Keldysh, G.A. Mesyats, A.N. Skrinskii, L.P. Pitaevskii, A.M. Prokhorov, Zh.I. Alferov, E.P. Velikhov, V.A. Matveev, V.A. Rubakov, E.L. Feinberg, B.B. Kadomtsev, A.S. Borovik-Romanov, Yu.A. Osip’yan

PACS: 72.20.Jv, 01.60.+q, 72.80.Ey, 72.80.Cw, 72.40.+w, 68.55.Ln, 85.30.-z, 71.55.Cn, 78.50.Ge, 77.22.Jp, 61.72.Ww, 01.10.Fv, 68.43.Mn, 82.65.+r, 81.15.Cd
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