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Electron properties of topological insulators. The structure of edge states and photogalvanic effects


Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation

Integrating the ideas of topology and topological transitions into solid state physics has led to the theoretical prediction and subsequent experimental discovery of topological insulators, a new class of three- or quasi-two-dimensional dielectric crystalline systems exhibiting stable conducting surface states. This paper briefly reviews the electronic properties of topological insulators. The structure of edge and bulk electronic states in two- and three-dimensional HgTe-based topological insulators is described in particular detail. Recent theoretical and experimental results on the interaction of an electromagnetic field with topological insulators and on edge and surface photogalvanic effects are presented.

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Fulltext is also available at DOI: 10.3367/UFNe.2017.11.038351
Keywords: topological insulators, edge and surface states, photogalvanic effects
PACS: 72.25.Dc, 73.20.−r, 73.40.−c, 73.50.Pz (all)
DOI: 10.3367/UFNe.2017.11.038351
URL: https://ufn.ru/en/articles/2018/10/h/
000454141800007
2018PhyU...61.1026T
Citation: Tarasenko S A "Electron properties of topological insulators. The structure of edge states and photogalvanic effects" Phys. Usp. 61 1026–1030 (2018)
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Received: 16th, April 2018, 29th, November 2017

Оригинал: Тарасенко С А «Электронные свойства топологических изоляторов. Структура краевых состояний и фотогальванические эффекты» УФН 188 1129–1134 (2018); DOI: 10.3367/UFNr.2017.11.038351

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