Issues

 / 

2018

 / 

October

  

Conferences and symposia


Electron properties of topological insulators. The structure of edge states and photogalvanic effects


Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation

Integrating the ideas of topology and topological transitions into solid state physics has led to the theoretical prediction and subsequent experimental discovery of topological insulators, a new class of three- or quasi-two-dimensional dielectric crystalline systems exhibiting stable conducting surface states. This paper briefly reviews the electronic properties of topological insulators. The structure of edge and bulk electronic states in two- and three-dimensional HgTe-based topological insulators is described in particular detail. Recent theoretical and experimental results on the interaction of an electromagnetic field with topological insulators and on edge and surface photogalvanic effects are presented.

Keywords: topological insulators, edge and surface states, photogalvanic effects
PACS: 72.25.Dc, 73.20.−r, 73.40.−c, 73.50.Pz (all)
DOI: 10.3367/UFNe.2017.11.038351
URL: https://ufn.ru/en/articles/2018/10/h/
Citation: Tarasenko S A "Electron properties of topological insulators. The structure of edge states and photogalvanic effects" Phys. Usp. 61 1026–1030 (2018)
BibTexBibNote ® (generic) BibNote ® (RIS)MedlineRefWorks
TY JOUR
TI Electron properties of topological insulators. The structure of edge states and photogalvanic effects
AU Tarasenko, S. A.
PB Physics-Uspekhi
PY 2018
JO Physics-Uspekhi
JF Physics-Uspekhi
JA Phys. Usp.
VL 61
IS 10
SP 1026-1030
UR https://ufn.ru/en/articles/2018/10/h/
ER https://doi.org/10.3367/UFNe.2017.11.038351

Received: 16th, April 2018, 29th, November 2017

Оригинал: Тарасенко С А «Электронные свойства топологических изоляторов. Структура краевых состояний и фотогальванические эффекты» УФН 188 1129–1134 (2018); DOI: 10.3367/UFNr.2017.11.038351

© 1918–2021 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions