Integrating the ideas of topology and topological transitions into solid state physics has led to the theoretical prediction and subsequent experimental discovery of topological insulators, a new class of three- or quasi-two-dimensional dielectric crystalline systems exhibiting stable conducting surface states. This paper briefly reviews the electronic properties of topological insulators. The structure of edge and bulk electronic states in two- and three-dimensional HgTe-based topological insulators is described in particular detail. Recent theoretical and experimental results on the interaction of an electromagnetic field with topological insulators and on edge and surface photogalvanic effects are presented.

Keywords: topological insulators, edge and surface states, photogalvanic effects PACS: 72.25.Dc, 73.20.−r, 73.40.−c, 73.50.Pz (all) DOI: 10.3367/UFNe.2017.11.038351 URL: https://ufn.ru/en/articles/2018/10/h/ 000454141800007 2018PhyU...61.1026T Citation: Tarasenko S A "Electron properties of topological insulators. The structure of edge states and photogalvanic effects" Phys. Usp. 61 1026–1030 (2018) BibTex BibNote ® (generic)BibNote ® (RIS)MedlineRefWorks %0 Journal Article %T Electron properties of topological insulators. The structure of edge states and photogalvanic effects %A S. A. Tarasenko %I Physics-Uspekhi %D 2018 %J Phys. Usp. %V 61 %N 10 %P 1026-1030 %U https://ufn.ru/en/articles/2018/10/h/ %U https://doi.org/10.3367/UFNe.2017.11.038351 Received: 16th, April 2018, accepted: 29th, November 2017 Оригинал: Тарасенко С А «Электронные свойства топологических изоляторов. Структура краевых состояний и фотогальванические эффекты» УФН 188 1129–1134 (2018); DOI: 10.3367/UFNr.2017.11.038351