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Electron properties of topological insulators. The structure of edge states and photogalvanic effects


Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation

Integrating the ideas of topology and topological transitions into solid state physics has led to the theoretical prediction and subsequent experimental discovery of topological insulators, a new class of three- or quasi-two-dimensional dielectric crystalline systems exhibiting stable conducting surface states. This paper briefly reviews the electronic properties of topological insulators. The structure of edge and bulk electronic states in two- and three-dimensional HgTe-based topological insulators is described in particular detail. Recent theoretical and experimental results on the interaction of an electromagnetic field with topological insulators and on edge and surface photogalvanic effects are presented.

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Fulltext is also available at DOI: 10.3367/UFNe.2017.11.038351
Keywords: topological insulators, edge and surface states, photogalvanic effects
PACS: 72.25.Dc, 73.20.−r, 73.40.−c, 73.50.Pz (all)
DOI: 10.3367/UFNe.2017.11.038351
URL: https://ufn.ru/en/articles/2018/10/h/
000454141800007
2018PhyU...61.1026T
Citation: Tarasenko S A "Electron properties of topological insulators. The structure of edge states and photogalvanic effects" Phys. Usp. 61 1026–1030 (2018)
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Received: 16th, April 2018, 29th, November 2017

Оригинал: Тарасенко С А «Электронные свойства топологических изоляторов. Структура краевых состояний и фотогальванические эффекты» УФН 188 1129–1134 (2018); DOI: 10.3367/UFNr.2017.11.038351

References (68) ↓ Cited by (10) Similar articles (20)

  1. Berezinskii V L Zh. Eksp. Teor. Fiz. 61 1144 (1971); Berezinskii V L Sov. Phys. JETP 34 610 (1972)
  2. Kosterlitz J M, Thouless D J J. Phys. C 6 1181 (1973)
  3. Thouless D J et al Phys. Rev. Lett. 49 405 (1982)
  4. Haldane F D M Phys. Rev. Lett. 61 2015 (1988)
  5. Hasan M Z, Kane C L Rev. Mod. Phys. 82 3045 (2010)
  6. Qi X-L, Zhang Sh-Ch Rev. Mod. Phys. 83 1057 (2011)
  7. Tamm I Phys. Z. Sowjetunion 1 733 (1932)
  8. Volkov B A, Pankratov O A Pis’ma ZhETF 42 145 (1985); Volkov B A, Pankratov O A JETP Lett. 42 178 (1985)
  9. Volkov B A, Pankratov O A Usp. Fiz. Nauk 149 334 (1986); Volkov B A, Pankratov O A Sov. Phys. Usp. 29 575 (1986)
  10. Dolgopolov V T Usp. Fiz. Nauk 184 113 (2014); Dolgopolov V T Phys. Usp. 57 105 (2014)
  11. Zhang H et al Nature Phys. 5 438 (2009)
  12. Xia Y et al Nature Phys. 5 398 (2009)
  13. Fu L, Kane C L Phys. Rev. B 76 045302 (2007)
  14. Brüne C et al Phys. Rev. Lett. 106 126803 (2011)
  15. Kozlov D A et al Phys. Rev. Lett. 112 196801 (2014)
  16. Dantscher K-M et al Phys. Rev. B 92 165314 (2015)
  17. Barfuss A et al Phys. Rev. Lett. 111 157205 (2013)
  18. Bernevig B A, Hughes T L, Zhang S-C Science 314 1757 (2006)
  19. König M et al Science 318 766 (2007)
  20. Knez I et al Phys. Rev. Lett. 112 026602 (2014)
  21. Liu Q et al Adv. Function. Mater. 26 3259 (2016)
  22. Roth A et al Science 325 294 (2009)
  23. Gusev G M et al Phys. Rev. B 84 121302(R) (2011)
  24. Zholudev M et al Phys. Rev. B 86 205420 (2012)
  25. Ma E et al Nature Commun. 6 7252 (2015)
  26. Min’kov G M i dr Pis’ma ZhETF 101 522 (2015); Min’kov G M et al JETP Lett. 101 469 (2015)
  27. Tikhonov E S et al Pis’ma ZhETF 101 787 (2015); Tikhonov E S et al JETP Lett. 101 708 (2015)
  28. Kononov A et al Pis’ma ZhETF 101 44 (2015); Kononov A et al JETP Lett. 101 41 (2015)
  29. Dantscher K-M et al Phys. Rev. B 95 201103(R) (2017)
  30. Kadykov A M et al Phys. Rev. Lett. 120 086401 (2018)
  31. D’yakonov M I, Khaetskii A V Pis’ma ZhETF 33 115 (1981); D’yakonov M I, Khaetskii A V JETP Lett. 33 110 (1981)
  32. Gerchikov L E, Subashiev A V Fiz. Tekh. Poluprovodn. 23 2210 (1989); Gerchikov L G, Subashiev A V Sov. Phys. Semicond. 23 1368 (1989)
  33. Raichev O E Phys. Rev. B 85 045310 (2012)
  34. Tarasenko S A et al Phys. Rev. B 91 081302(R) (2015)
  35. Durnev M V, Tarasenko S A Phys. Rev. B 93 075434 (2016)
  36. Minkov G M et al Phys. Rev. B 93 155304 (2016)
  37. König M et al J. Phys. Soc. Jpn. 77 031007 (2008)
  38. Enaldiev V V, Zagorodnev I V, Volkov V A Pis’ma ZhETF 101 94 (2015); Enaldiev V V, Zagorodnev I V, Volkov V A JETP Lett. 101 89 (2015)
  39. Gusev G M et al Phys. Rev. B 87 081311(R) (2013)
  40. Tanaka Y, Furusaki A, Matveev K A Phys. Rev. Lett. 106 236402 (2011)
  41. Lunde A M, Platero G Phys. Rev. B 86 035112 (2012)
  42. Altshuler B L, Aleiner I L, Yudson V I Phys. Rev. Lett. 111 086401 (2013)
  43. Kurilovich P D et al Pis’ma ZhETF 106 575 (2017); Kurilovich P D et al JETP Lett. 106 593 (2017)
  44. Maestro A D, Hyart T, Rosenow B Phys. Rev. B 87 165440 (2013)
  45. Lunde A M, Platero G Phys. Rev. B 88 115411 (2013)
  46. Tarasenko S A, Burkard G Phys. Rev. B 94 045309 (2016)
  47. Väyrynen J I et al Phys. Rev. B 90 115309 (2014)
  48. Dóra B et al Phys. Rev. Lett. 108 056602 (2012)
  49. DurnevM V, Tarasenko S A arXiv:1805.04331
  50. Kaladzhyan V, Aseev P P, Artemenko S N Phys. Rev. B 92 155424 (2015)
  51. Tarasenko S A Pis’ma ZhETF 85 216 (2007); Tarasenko S A JETP Lett. 85 182 (2007)
  52. Entin M V, Magarill L I Pis’ma ZhETF 103 804 (2016); Entin M V, Magarill L I JETP Lett. 103 711 (2016)
  53. Checkelsky J G et al Phys. Rev. Lett. 103 246601 (2009)
  54. Analytis J G et al Phys. Rev. B 81 205407 (2010)
  55. Ren Z et al Phys. Rev. B 84 165311 (2011)
  56. Xia B et al Phys. Rev. B 87 085442 (2013)
  57. Pan Y et al New J. Phys. 16 123035 (2014)
  58. Shuvaev A et al Appl. Phys. Lett. 102 241902 (2013)
  59. Shuvaev A M et al Phys. Rev. B 87 121104(R) (2013)
  60. Hsieh D et al Phys. Rev. Lett. 106 057401 (2011)
  61. McIver J W et al Nature Nanotechnol. 7 96 (2012)
  62. Olbrich P et al Phys. Rev. Lett. 113 096601 (2014)
  63. Shikin A M i dr Fiz. Tverd. Tela 58 1617 (2016); Shikin A M et al Phys. Solid State 58 1675 (2016)
  64. Hamh S Y et al Phys. Rev. B 94 161405(R) (2016)
  65. Galeeva A V et al Semicond. Sci. Technol. 31 095010 (2016)
  66. Pan Y et al Nature Commun. 8 1037 (2017)
  67. Huang Y Q et al Nature Commun. 8 15401 (2017)
  68. Kuroda K et al Phys. Rev. B 95 081103(R) (2017)
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