Electronic structure of silicon nitride

V.A. Gritsenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

Amorphous oxide SiO₂, oxynitride SiO_xN_y, and silicon nitride Si₃N₄ are the three key dielectric materials of silicon device technology. Silicon nitride is currently finding use in a variety of applications, in particular, as a storage medium in next-generation flash memory devices. Varying the chemical composition of nonstoichiometric silicon-rich SiN_x allows a wide-range control of its optical and electrical properties. In this review, an analysis of the electronic structure of silicon nitride of varying composition is presented.

PACS: 71.15.Mb, 71.23.−k, 77.22.−d, 77.55.df, 77.84.Bw, 78.20.−e (all)
DOI: 10.3367/UFNe.0182.201205d.0531
URL: https://ufn.ru/en/articles/2012/5/d/
Web of Science

000307559000004
Scopus

2-s2.0-84864992214
ADS NASA

2012PhyU...55..498G
Citation: Gritsenko V A "Electronic structure of silicon nitride" Phys. Usp. 55 498–507 (2012)

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Received: 8th, December 2011, accepted: 16th, January 2012

Оригинал: Гриценко В А «Электронная структура нитрида кремния» УФН 182 531–541 (2012); DOI: 10.3367/UFNr.0182.201205d.0531

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