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Electronic structure of silicon nitride


Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

Amorphous oxide SiO2, oxynitride SiOxNy, and silicon nitride Si3N4 are the three key dielectric materials of silicon device technology. Silicon nitride is currently finding use in a variety of applications, in particular, as a storage medium in next-generation flash memory devices. Varying the chemical composition of nonstoichiometric silicon-rich SiNx allows a wide-range control of its optical and electrical properties. In this review, an analysis of the electronic structure of silicon nitride of varying composition is presented.

Text can be downloaded in Russian. English translation is available on IOP Science.
PACS: 71.15.Mb, 71.23.−k, 77.22.−d, 77.55.df, 77.84.Bw, 78.20.−e (all)
DOI: 10.3367/UFNe.0182.201205d.0531
URL: https://ufn.ru/en/articles/2012/5/d/
Citation: Gritsenko V A "Electronic structure of silicon nitride" Phys. Usp. 55 498–507 (2012)
BibTexBibNote ® (generic) BibNote ® (RIS)MedlineRefWorks
TY JOUR
TI Electronic structure of silicon nitride
AU Gritsenko, V. A.
PB Physics-Uspekhi
PY 2012
JO Physics-Uspekhi
JF Physics-Uspekhi
JA Phys. Usp.
VL 55
IS 5
SP 498-507
UR https://ufn.ru/en/articles/2012/5/d/
ER https://doi.org/10.3367/UFNe.0182.201205d.0531

Received: 8th, December 2011, 16th, January 2012

Оригинал: Гриценко В А «Электронная структура нитрида кремния» УФН 182 531–541 (2012); DOI: 10.3367/UFNr.0182.201205d.0531

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