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From the current literature


Electronic structure of silicon nitride


Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

Amorphous oxide SiO2, oxynitride SiOxNy, and silicon nitride Si3N4 are the three key dielectric materials of silicon device technology. Silicon nitride is currently finding use in a variety of applications, in particular, as a storage medium in next-generation flash memory devices. Varying the chemical composition of nonstoichiometric silicon-rich SiNx allows a wide-range control of its optical and electrical properties. In this review, an analysis of the electronic structure of silicon nitride of varying composition is presented.

Fulltext pdf (801 KB)
Fulltext is also available at DOI: 10.3367/UFNe.0182.201205d.0531
PACS: 71.15.Mb, 71.23.−k, 77.22.−d, 77.55.df, 77.84.Bw, 78.20.−e (all)
DOI: 10.3367/UFNe.0182.201205d.0531
URL: https://ufn.ru/en/articles/2012/5/d/
000307559000004
2-s2.0-84864992214
2012PhyU...55..498G
Citation: Gritsenko V A "Electronic structure of silicon nitride" Phys. Usp. 55 498–507 (2012)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Received: 8th, December 2011, 16th, January 2012

Оригинал: Гриценко В А «Электронная структура нитрида кремния» УФН 182 531–541 (2012); DOI: 10.3367/UFNr.0182.201205d.0531

References (34) Cited by (46) ↓ Similar articles (5)

  1. Biriukov A E, Korsunsky A M Sensors And Actuators A: Physical 379 115914 (2024)
  2. Skvortsova L N, Artyukh I A et al Kinetika I Kataliz 65 125 (2024)
  3. Skvortsova L N, Artyukh I A et al Kinet Catal 65 101 (2024)
  4. Mandal K K, Singh A K et al ACS Materials Lett. 6 1831 (2024)
  5. Skvortsova L N, Bolgaru K A et al Russ Phys J (2023)
  6. Skvortsova L N, Kazantseva K I i dr Neorganičeskie Materialy 59 333 (2023)
  7. Xu H, Li Z et al Nanomaterials 13 1352 (2023)
  8. Skvortsova L N, Kazantseva K I et al Inorg Mater 59 321 (2023)
  9. Mizginov D, Telminov O et al Crystals 13 323 (2023)
  10. Makeev V V, Teplov G S, Sattarov P Sh Elektronnaya Tekhnika. Seriya 3. Mikroelektronika (4) 43 (2022)
  11. Dzyuba V P, Amosov A V et al Eur. Phys. J. Plus 137 (9) (2022)
  12. Makeev V V, Teplov G S, Sattarov P Sh Elektronnaya Tekhnika. Seriya 3. Mikroelektronika (4) 34 (2022)
  13. Petkov N, Bakalova T et al JNanoR 73 175 (2022)
  14. Konusov F V, Pavlov S K et al J. Synch. Investig. 15 139 (2021)
  15. Konusov F, Pavlov S et al Radiation Effects And Defects In Solids 176 308 (2021)
  16. Krasnikov G Ya, Makeev V V i dr Elektronnaya Tekhnika. Seriya 3. Mikroelektronika (4) 55 (2021)
  17. Gritsenko V A, Gismatulin A A, Orlov O M Nanotechnol Russia 16 722 (2021)
  18. Gismatulin A A, Kamaev G N et al Sci Rep 11 (1) (2021)
  19. Dzyuba V P, Amosov A V, Kulchin Yu N Quantum Electron. 51 920 (2021)
  20. Artyukh I A, Bolgaru K A et al ChemistrySelect 6 10025 (2021)
  21. Shekaari A, Jafari M Computational Materials Science 180 109693 (2020)
  22. Cramer S P X-Ray Spectroscopy with Synchrotron Radiation Biological And Medical Physics, Biomedical Engineering Chapter 7 (2020) p. 165
  23. Oreshonkov A S, Roginskii E M, Atuchin V V Journal Of Physics And Chemistry Of Solids 137 109219 (2020)
  24. Sherstoboeva M V, Bavykina A V et al ChemistrySelect 5 1912 (2020)
  25. Vasil’ev V Yu Elektronnaya Tekhnika. Seriya 3. Mikroelektronika (1) 31 (2020)
  26. Krasnikov G Ya, Orlov O M, Makeev V V Elektronnaya Tekhnika. Seriya 3. Mikroelektronika (1) 42 (2020)
  27. Tiour F, Benyahia B et al Appl. Phys. A 126 (1) (2020)
  28. Konusov F, Pavlov S et al Surface And Coatings Technology 389 125564 (2020)
  29. Gismatulin A A, Orlov O M et al 116 (20) (2020)
  30. Orlov O M, Gismatulin A A et al Russ Microelectron 49 372 (2020)
  31. Gritsenko V A, Kruchinin V N et al J. Exp. Theor. Phys. 129 924 (2019)
  32. Pashayev A M, Tagiyev B H et al Semiconductors 53 210 (2019)
  33. Muñoz-Rosas A L, Rodríguez-Gómez A et al J Mater Sci 54 14296 (2019)
  34. Gritsenko V A, Gismatulin A A et al Mater. Res. Express 6 076401 (2019)
  35. G M V, G G Yu et al 2D Materials Chapter 4 (2019)
  36. Linke J, Fazio M A et al Solar Energy Materials And Solar Cells 187 104 (2018)
  37. Tikhov S V, Gorshkov O N et al Semiconductors 52 1540 (2018)
  38. Chanturia V A, Bunin I Zh et al J Min Sci 54 646 (2018)
  39. Czarnacka K, Komarov F F et al 2017 IEEE 7th International Conference Nanomaterials: Application & Properties (NAP), (2017) p. 02NTF34-1
  40. Parkhomenko I, Vlasukova L et al Thin Solid Films 626 70 (2017)
  41. Liu Sh, Fang M et al Sci Rep 5 (1) (2015)
  42. Cheng Ch-Q, Li G et al Acta Phys. Sin. 64 067102 (2015)
  43. Flammini R, Allegrini P et al Phys. Rev. B 91 (7) (2015)
  44. Vlasukova L A, Komarov F F et al J Appl Spectrosc 82 386 (2015)
  45. Komarov F, Vlasukova L et al Thin Solid Films 579 110 (2015)
  46. Nasyrov K A, Gritsenko V A Uspekhi Fizicheskikh Nauk 183 1099 (2013) [Nasyrov K A, Gritsenko V A Phys.-Usp. 56 999 (2013)]
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