Electronic structure of silicon nitride
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
Amorphous oxide SiO2, oxynitride SiOxNy, and silicon nitride Si3N4 are the three key dielectric materials of silicon device technology. Silicon nitride is currently finding use in a variety of applications, in particular, as a storage medium in next-generation flash memory devices. Varying the chemical composition of nonstoichiometric silicon-rich SiNx allows a wide-range control of its optical and electrical properties. In this review, an analysis of the electronic structure of silicon nitride of varying composition is presented.