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From the current literature


Electronic structure of silicon nitride


Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

Amorphous oxide SiO2, oxynitride SiOxNy, and silicon nitride Si3N4 are the three key dielectric materials of silicon device technology. Silicon nitride is currently finding use in a variety of applications, in particular, as a storage medium in next-generation flash memory devices. Varying the chemical composition of nonstoichiometric silicon-rich SiNx allows a wide-range control of its optical and electrical properties. In this review, an analysis of the electronic structure of silicon nitride of varying composition is presented.

Fulltext pdf (801 KB)
Fulltext is also available at DOI: 10.3367/UFNe.0182.201205d.0531
PACS: 71.15.Mb, 71.23.−k, 77.22.−d, 77.55.df, 77.84.Bw, 78.20.−e (all)
DOI: 10.3367/UFNe.0182.201205d.0531
URL: https://ufn.ru/en/articles/2012/5/d/
000307559000004
2-s2.0-84864992214
2012PhyU...55..498G
Citation: Gritsenko V A "Electronic structure of silicon nitride" Phys. Usp. 55 498–507 (2012)
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Received: 8th, December 2011, 16th, January 2012

Оригинал: Гриценко В А «Электронная структура нитрида кремния» УФН 182 531–541 (2012); DOI: 10.3367/UFNr.0182.201205d.0531

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