Major applications of high-permittivity dielectric materials in silicon devices are reviewed. The basics and software implementations of the electron density functional method are considered. Results of first-principle calculations of the electronic structure are analyzed for the three most important and promising high-permittivity dielectrics, Al₂O₃, HfO₂ and TiO₂.

PACS: 71.15.Mb, 77.55.D−, 85.30.−z (all) DOI: 10.3367/UFNe.0180.201006b.0587 URL: https://ufn.ru/en/articles/2010/6/b/ 000281644500002 2-s2.0-77958606853 2010PhyU...53..561P Citation: Perevalov T V, Gritsenko V A "Application and electronic structure of high-permittivity dielectrics" Phys. Usp. 53 561–575 (2010) BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks Оригинал: Перевалов Т В, Гриценко В А «Применение и электронная структура диэлектриков с высокой диэлектрической проницаемостью» УФН 180 587–603 (2010); DOI: 10.3367/UFNr.0180.201006b.0587