Issues

 / 

2004

 / 

April

  

Reviews of topical problems


Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth

 a,  b,  b,  b,  b
a Department of Physical Electronics, Bashkir State University, Ufa, Russian Federation
b Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Sendai, 980-77, Japan

The current status of studies and new trends in obtaining and exploring surface characteristics of III-nitride semiconductors are analyzed and reviewed. Using a unique setup combining a scanning tunneling microscope (STM) with an inline molecular-beam epitaxy (MBE) chamber, the surface atomic structures on both hexagonal and cubic GaN films grown by nitrogen-plasma-assisted MBE have been studied in situ over a broad range of temperatures and [N]/[Ga] ratios. Models of the observed surface phases are developed based on the comparative analysis of their atomic-resolution STM images and ab initio total energy calculations.

Fulltext pdf (1.4 MB)
Fulltext is also available at DOI: 10.1070/PU2004v047n04ABEH001643
PACS: 61.14.Hg, 71.15.Nc, 81.05.Ea (all)
DOI: 10.1070/PU2004v047n04ABEH001643
URL: https://ufn.ru/en/articles/2004/4/d/
000223560800004
2004PhyU...47..371B
Citation: Bakhtizin R Z, Xue Q-Zh, Xue Q-K, Wu K-H, Sakurai T "Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth" Phys. Usp. 47 371–391 (2004)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Бахтизин Р З, Щуе Ч-Ж, Щуе Ч-К, Ву К-Х, Сакурай Т «Сканирующая туннельная микроскопия гетероэпитаксиального роста пленок III-нитридов» УФН 174 383–405 (2004); DOI: 10.3367/UFNr.0174.200404d.0383

References (98) Cited by (11) Similar articles (20) ↓

  1. O.M. Braun, V.K. Medvedev “Interaction between particles adsorbed on metal surfacesSov. Phys. Usp. 32 328–348 (1989)
  2. S.A. Knyazev, G.K. Zyryanov, I.A. Pchelkin “Spin polarization of low-energy electrons interacting with solid surfacesSov. Phys. Usp. 28 372–390 (1985)
  3. A.A. Chernyshov, K.V. Karelsky, A.S. Petrosyan “Subgrid-scale modeling for the study of compressible magnetohydrodynamic turbulence in space plasmasPhys. Usp. 57 421–452 (2014)
  4. Yu.B. Bolkhovityanov, O.P. Pchelyakov “GaAs epitaxy on Si substrates: modern status of research and engineeringPhys. Usp. 51 437–456 (2008)
  5. V.Ya. Pokrovskii, S.G. Zybtsev et alHigh-frequency, ’quantum’ and electromechanical effects in quasi-one-dimensional charge density wave conductorsPhys. Usp. 56 29–48 (2013)
  6. V.P. Skripov, A.V. Skripov “Spinodal decomposition (phase transitions via unstable states)Sov. Phys. Usp. 22 389–410 (1979)
  7. A.L. Fradkov “Application of cybernetic methods in physicsPhys. Usp. 48 103–127 (2005)
  8. V.E. Fortov, D.H.H. Hoffmann, B.Yu. Sharkov “Intense ion beams for generating extreme states of matterPhys. Usp. 51 109–131 (2008)
  9. V.B. Molodkin, A.P. Shpak et alMultiparametric crystallography using the diversity of multiple scattering patterns for Bragg and diffuse waves. Method of standing diffuse wavesPhys. Usp. 54 661–689 (2011)
  10. V.D. Lakhno “Pekar's ansatz and the strong coupling problem in polaron theoryPhys. Usp. 58 295–308 (2015)
  11. D.D. Sukachev “Large quantum networksPhys. Usp. 64 1021–1037 (2021)
  12. M.A. Semina, R.A. Suris “Localized excitons and trions in semiconductor nanosystemsPhys. Usp. 65 111–130 (2022)
  13. V.A. Vozhakov, M.V. Bastrakova et alState control in superconducting quantum processorsPhys. Usp. 65 421–439 (2022)
  14. M.V. Kuznetsov, A.S. Razinkin, A.L. Ivanovskii “Oxide nanostructures on a Nb surface and related systems: experiments and ab initio calculationsPhys. Usp. 53 995–1014 (2010)
  15. A.B. Roitsin, V.M. Maevskii “Electron paramagnetic resonance of solid surfacesSov. Phys. Usp. 32 891–910 (1989)
  16. M.V. Kurik, O.D. Lavrentovich “Defects in liquid crystals: homotopy theory and experimental studiesSov. Phys. Usp. 31 196–224 (1988)
  17. B.M. Smirnov “Generation of cluster beamsPhys. Usp. 46 589–628 (2003)
  18. V.A. Gritsenko “Atomic structure of the amorphous nonstoichiometric silicon oxides and nitridesPhys. Usp. 51 699–708 (2008)
  19. I.K. Kamilov, A.K. Murtazaev, Kh.K. Aliev “Monte Carlo studies of phase transitions and critical phenomenaPhys. Usp. 42 689–709 (1999)
  20. S.V. Demishev, Yu.V. Kosichkin et alAmorphous semiconductors prepared by quenching under high pressurePhys. Usp. 37 185–217 (1994)

The list is formed automatically.

© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions