Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth

R.Z. Bakhtizin^a, Q.-Zh. Xue^b, Q.-K. Xue^b, K.-H. Wu^b, T. Sakurai^b
^aDepartment of Physical Electronics, Bashkir State University, Ufa, Russian Federation
^bInstitute for Materials Research, Tohoku University, 2-1-1 Katahira, Sendai, 980-77, Japan

The current status of studies and new trends in obtaining and exploring surface characteristics of III-nitride semiconductors are analyzed and reviewed. Using a unique setup combining a scanning tunneling microscope (STM) with an inline molecular-beam epitaxy (MBE) chamber, the surface atomic structures on both hexagonal and cubic GaN films grown by nitrogen-plasma-assisted MBE have been studied in situ over a broad range of temperatures and [N]/[Ga] ratios. Models of the observed surface phases are developed based on the comparative analysis of their atomic-resolution STM images and ab initio total energy calculations.

PACS: 61.14.Hg, 71.15.Nc, 81.05.Ea (all)
DOI: 10.1070/PU2004v047n04ABEH001643
URL: https://ufn.ru/en/articles/2004/4/d/
Web of Science

000223560800004
ADS NASA

2004PhyU...47..371B
Citation: Bakhtizin R Z, Xue Q-Zh, Xue Q-K, Wu K-H, Sakurai T "Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth" Phys. Usp. 47 371–391 (2004)

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Оригинал: Бахтизин Р З, Щуе Ч-Ж, Щуе Ч-К, Ву К-Х, Сакурай Т «Сканирующая туннельная микроскопия гетероэпитаксиального роста пленок III-нитридов» УФН 174 383–405 (2004); DOI: 10.3367/UFNr.0174.200404d.0383

References (98) Cited by (10) Similar articles (20) ↓

O.M. Braun, V.K. Medvedev “Interaction between particles adsorbed on metal surfaces” 32 328–348 (1989)
S.A. Knyazev, G.K. Zyryanov, I.A. Pchelkin “Spin polarization of low-energy electrons interacting with solid surfaces” 28 372–390 (1985)
A.A. Chernyshov, K.V. Karelsky, A.S. Petrosyan “Subgrid-scale modeling for the study of compressible magnetohydrodynamic turbulence in space plasmas” 57 421–452 (2014)
Yu.B. Bolkhovityanov, O.P. Pchelyakov “GaAs epitaxy on Si substrates: modern status of research and engineering” 51 437–456 (2008)
A.L. Fradkov “Application of cybernetic methods in physics” 48 103–127 (2005)
V.E. Fortov, D.H.H. Hoffmann, B.Yu. Sharkov “Intense ion beams for generating extreme states of matter” 51 109–131 (2008)
V.B. Molodkin, A.P. Shpak et al “Multiparametric crystallography using the diversity of multiple scattering patterns for Bragg and diffuse waves. Method of standing diffuse waves” 54 661–689 (2011)
V.D. Lakhno “Pekar's ansatz and the strong coupling problem in polaron theory” 58 295–308 (2015)
D.D. Sukachev “Large quantum networks” 64 1021–1037 (2021)
M.A. Semina, R.A. Suris “Localized excitons and trions in semiconductor nanosystems” 65 111–130 (2022)
V.A. Vozhakov, M.V. Bastrakova et al “State control in superconducting quantum processors” 65 421–439 (2022)
M.V. Kuznetsov, A.S. Razinkin, A.L. Ivanovskii “Oxide nanostructures on a Nb surface and related systems: experiments and ab initio calculations” 53 995–1014 (2010)
A.B. Roitsin, V.M. Maevskii “Electron paramagnetic resonance of solid surfaces” 32 891–910 (1989)
M.V. Kurik, O.D. Lavrentovich “Defects in liquid crystals: homotopy theory and experimental studies” 31 196–224 (1988)
B.M. Smirnov “Generation of cluster beams” 46 589–628 (2003)
V.A. Gritsenko “Atomic structure of the amorphous nonstoichiometric silicon oxides and nitrides” 51 699–708 (2008)
I.K. Kamilov, A.K. Murtazaev, Kh.K. Aliev “Monte Carlo studies of phase transitions and critical phenomena” 42 689–709 (1999)
S.V. Demishev, Yu.V. Kosichkin et al “Amorphous semiconductors prepared by quenching under high pressure” 37 185–217 (1994)
A.I. Gusev “Nonstoichiometry and superstructures” 57 839–876 (2014)
V.S. Vorob’ev “Plasma arising during the interaction of laser radiation with solids” 36 (12) 1129–1157 (1993)

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