PACS numbers

61.14.Hg Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED) 71.15.Nc Total energy and cohesive energy calculations 81.05.Ea III-V semiconductors
  1. V.V. Brazhkin “Interparticle interaction in condensed media: some elements are ’more equal than others’52 369–376 (2009)
    33.15.Fm, 61.50.Lt, 71.15.Nc, 81.05.Uw, 87.15.Fh (all)
  2. Yu.B. Bolkhovityanov, O.P. Pchelyakov “GaAs epitaxy on Si substrates: modern status of research and engineering51 437–456 (2008)
    61.72.Lk, 62.25.−g, 81.05.Cy, 81.05.Ea, 81.15.−z, 85.40.Sz (all)
  3. R.Z. Bakhtizin, Q.-Zh. Xue et alScanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth47 371–391 (2004)
    61.14.Hg, 71.15.Nc, 81.05.Ea (all)
  4. R.Z. Bakhtizin, T. Hashizume et alAtomic structures on a GaAs(001) surface grown by molecular beam epitaxy40 1175–1187 (1997)
    61.14.Hg, 61.16.Di, 68.55.Bd
  5. E.G. Maksimov “Many-atom interactions in solids34 (3) 282–282 (1991)
    01.30.Cc, 01.30.Vv, 71.15.Nc, 71.10.Ca, 68.35.Bs, 61.72.Bb (all)
  6. O.M. Braun, V.K. Medvedev “Interaction between particles adsorbed on metal surfaces32 328–348 (1989)
    68.43.−h, 68.35.Bs, 61.14.Hg (all)
  7. A.P. Silin “Low-energy electron diffraction31 381–381 (1988)
    61.14.Hg, 01.30.Vv (all)
  8. V.A. Grazhulis “Low-temperature investigations of surfaces of certain semiconductors30 745–745 (1987)
    68.35.Bs, 68.47.Fg, 68.43.−h, 79.60.Bm, 68.49.Jk, 61.14.Hg (all)
  9. S.A. Knyazev, G.K. Zyryanov, I.A. Pchelkin “Spin polarization of low-energy electrons interacting with solid surfaces28 372–390 (1985)
    68.49.Jk, 68.43.−h, 75.70.Rf, 61.14.Hg, 79.20.Hx (all)
  10. A.A. Babad-Zakhryapin, N.S. Gorbunov, V.I. Izvekov “Experimental techniques of low-energy electron diffraction5 711–722 (1963)
    61.14.Hg, 68.35.Bs, 68.47.De (all)
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