β-SiC(100) surface: atomic structures and electronic properties

V.Yu. Aristov
Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation

This review organizes and presents the state of the art of research related to the composition, atomic and electronic structure, and electronic properties of various superstructures that were recently shown to exist on clean β-SiC(100) surfaces. In the past 10 years, considerable experimental and theoretical progress in clean β-SiC(100) surfaces has been made. In particular, various surface reconstructions have been identified and studied, and the controlled formation of highly stable, very long straight lines of Si dimers self-organizing on a β-SiC(100) surface have been found, with the line separation being determined by the annealing time and temperature. Many aspects of the field (composition, unit cell models, etc.) are still subject to debate, however.

PACS: 68.35.Rh, 68.65.+g, 71.10.Pm, 73.61.−r (all)
DOI: 10.1070/PU2001v044n08ABEH000979
URL: https://ufn.ru/en/articles/2001/8/a/
Web of Science

000173352300001
Citation: Aristov V Yu "β-SiC(100) surface: atomic structures and electronic properties" Phys. Usp. 44 761–783 (2001)

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Оригинал: Аристов В Ю «Поверхность β-SiC (100): атомная структура и электронные свойства» УФН 171 801–826 (2001); DOI: 10.3367/UFNr.0171.200108a.0801

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