This review organizes and presents the state of the art of research related to the composition, atomic and electronic structure, and electronic properties of various superstructures that were recently shown to exist on clean β-SiC(100) surfaces. In the past 10 years, considerable experimental and theoretical progress in clean β-SiC(100) surfaces has been made. In particular, various surface reconstructions have been identified and studied, and the controlled formation of highly stable, very long straight lines of Si dimers self-organizing on a β-SiC(100) surface have been found, with the line separation being determined by the annealing time and temperature. Many aspects of the field (composition, unit cell models, etc.) are still subject to debate, however.

PACS: 68.35.Rh, 68.65.+g, 71.10.Pm, 73.61.−r (all) DOI: 10.1070/PU2001v044n08ABEH000979 URL: https://ufn.ru/en/articles/2001/8/a/ 000173352300001 Citation: Aristov V Yu "β-SiC(100) surface: atomic structures and electronic properties" Phys. Usp. 44 761–783 (2001) BibTexBibNote ® (generic)BibNote ® (RIS) MedlineRefWorks PT Journal Article TI β-SiC(100) surface: atomic structures and electronic properties AU Aristov V Yu FAU Aristov VY DP 10 Aug, 2001 TA Phys. Usp. VI 44 IP 8 PG 761-783 RX 10.1070/PU2001v044n08ABEH000979 URL https://ufn.ru/en/articles/2001/8/a/ SO Phys. Usp. 2001 Aug 10;44(8):761-783 Оригинал: Аристов В Ю «Поверхность β-SiC (100): атомная структура и электронные свойства» УФН 171 801–826 (2001); DOI: 10.3367/UFNr.0171.200108a.0801