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Reviews of topical problems


β-SiC(100) surface: atomic structures and electronic properties


Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation

This review organizes and presents the state of the art of research related to the composition, atomic and electronic structure, and electronic properties of various superstructures that were recently shown to exist on clean β-SiC(100) surfaces. In the past 10 years, considerable experimental and theoretical progress in clean β-SiC(100) surfaces has been made. In particular, various surface reconstructions have been identified and studied, and the controlled formation of highly stable, very long straight lines of Si dimers self-organizing on a β-SiC(100) surface have been found, with the line separation being determined by the annealing time and temperature. Many aspects of the field (composition, unit cell models, etc.) are still subject to debate, however.

Fulltext is available at IOP
PACS: 68.35.Rh, 68.65.+g, 71.10.Pm, 73.61.−r (all)
DOI: 10.1070/PU2001v044n08ABEH000979
URL: https://ufn.ru/en/articles/2001/8/a/
Citation: Aristov V Yu "β-SiC(100) surface: atomic structures and electronic properties" Phys. Usp. 44 761–783 (2001)
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Оригинал: Аристов В Ю «Поверхность β-SiC (100): атомная структура и электронные свойства» УФН 171 801–826 (2001); DOI: 10.3367/UFNr.0171.200108a.0801

References (94) Cited by (25) ↓ Similar articles (20)

  1. Aristov V Yu, Chaika A N et al Jetp Lett. 113 176 (2021)
  2. V M O, N Ch A, Yu A V Silicon Materials Chapter 7 (2019)
  3. Chaika A N, Aristov V Y et al Handbook of Graphene 1 (2019) p. 117
  4. Aristov V Yu, Chaika A N et al ACS Nano 13 526 (2019)
  5. Yang J, Peng Yu, Yang B Journal Of Dispersion Science And Technology 40 408 (2019)
  6. Yang J, Peng Yu et al Mater. Res. Express 5 085511 (2018)
  7. Chaika A N, Aristov V Yu, Molodtsova O V Progress In Materials Science 89 1 (2017)
  8. Wang D, Guo Zh et al Catalysis Communications 61 53 (2015)
  9. Peng Yu, Guo Zh et al J. Mater. Chem. A 2 6296 (2014)
  10. Kuzubov A A, Eliseeva N S et al Phys. Solid State 56 1654 (2014)
  11. Kuzubov A A, Eliseeva N S et al Russ. J. Phys. Chem. 86 1091 (2012)
  12. Konopka A, Greulich-Weber S et al MRS Proc. 1322 (2011)
  13. Abe Sh, Handa H et al Jpn. J. Appl. Phys. 50 070102 (2011)
  14. Abe Sh, Handa H et al Jpn. J. Appl. Phys. 50 070102 (2011)
  15. Konopka A, Aşik B et al IOP Conf. Ser.: Mater. Sci. Eng. 15 012013 (2010)
  16. Aristov V Yu, Urbanik G et al Nano Lett. 10 992 (2010)
  17. Trabada D G, Flores F, Ortega J Phys. Rev. B 80 (7) (2009)
  18. Larina E V, Chmyrev V I et al Inorg Mater 44 823 (2008)
  19. Catellani A, Cicero G J. Phys. D: Appl. Phys. 40 6215 (2007)
  20. Belousov V V Russ. J. Phys. Chem. 81 441 (2007)
  21. Kasatkin S I, Murav?jev A M et al Russ Microelectron 34 47 (2005)
  22. Taskin A N, Udodov V N, Potekaev A I Russ Phys J 48 873 (2005)
  23. Peng X, Ye L, Wang X Surface Science 548 51 (2004)
  24. Bermudez V M Surface Science 540 255 (2003)
  25. Ostendorf R, Benesch C et al Phys. Rev. B 66 (24) (2002)

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