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β-SiC(100) surface: atomic structures and electronic properties


Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation

This review organizes and presents the state of the art of research related to the composition, atomic and electronic structure, and electronic properties of various superstructures that were recently shown to exist on clean β-SiC(100) surfaces. In the past 10 years, considerable experimental and theoretical progress in clean β-SiC(100) surfaces has been made. In particular, various surface reconstructions have been identified and studied, and the controlled formation of highly stable, very long straight lines of Si dimers self-organizing on a β-SiC(100) surface have been found, with the line separation being determined by the annealing time and temperature. Many aspects of the field (composition, unit cell models, etc.) are still subject to debate, however.

Fulltext is available at IOP
PACS: 68.35.Rh, 68.65.+g, 71.10.Pm, 73.61.−r (all)
DOI: 10.1070/PU2001v044n08ABEH000979
URL: https://ufn.ru/en/articles/2001/8/a/
Citation: Aristov V Yu "β-SiC(100) surface: atomic structures and electronic properties" Phys. Usp. 44 761–783 (2001)
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Оригинал: Аристов В Ю «Поверхность β-SiC (100): атомная структура и электронные свойства» УФН 171 801–826 (2001); DOI: 10.3367/UFNr.0171.200108a.0801

References (94) ↓ Cited by (25) Similar articles (20)

  1. Tairov Yu M Mater. Sci. Eng. B 29 83 (1995)
  2. Silicon Carbide. A Review of Fundamental Questions and Applications to Current Device Technology Vol. I & II (Eds W J Choyke, H Matsunami, G Pensl, Berlin: Akademie Verlag, 1998)
  3. Silicon Carbide Electronic Devices and Materials Mater. Res. Soc. Bull. 22 (1997)
  4. Silicon Carbide Electronic Devices IEEE Trans. Electron Dev. 46 (Special Issue, 1999)
  5. Proceedings of the 2nd European Conference on Silicon Carbide and Related Materials Mat. Sci. Eng. B 61-62 (1999); Proceedings of the International Conference on Silicon Carbide and Related Materials Mat. Sci. Forum 338-342 (1999); Proceedings of the 3nd European Conference on Silicon Carbide and Related Materials (in press)
  6. Nanotechnology Research Direction, Vision for Nanotechnology R&D in the Next Decade, National Science and Technology Council. Interagency Working Group on Nanoscience, Engineering and Technology, Workshop report (1999)
  7. Nanotechnology (Ed. G Timp, New York: AIP Press, Springer, 1999)
  8. Stroscio J A, Eigler D M Science 254 319 (1991)
  9. Dyan M J. Vac. Sci. Technol. A 3 361 (1985); A 4 38 (1986)
  10. Bellina J J, Ferrante J, Zeller M V J. Vac. Sci. Technol. A 4 1692 (1986)
  11. Kaplan R, Parrill T M Surf. Sci. 165 L45 (1986)
  12. Hara S et al. Surf. Sci. 231 L196 (1990)
  13. Powers J M et al. Surf. Sci. 260 L7 (1992)
  14. Wenchang L, Weidong Y, Kaiming Z J. Phys.: Condens. Mat. 3 9079 (1991)
  15. Carter S J N Solid State Commun. 72 671 (1989)
  16. Craig B I, Smith P V Surf. Sci. 233 255 (1990)
  17. Mehandru S P, Anderson A B Phys. Rev. B 42 9040 (1990)
  18. Badziag P Phys. Rev. B 44 11143 (1991)
  19. Yan H, Hu X, Jonsson H Surf. Sci. 316 181 (1994)
  20. Hu X et at. J. Phys.: Condens. Mat. 7 1069 (1995)
  21. Halicioglu T Phys. Rev. B 51 7217 (1995)
  22. Gutierrez R et al. Phys. Rev. B 60 1771 (1999)
  23. Sabisch M et al. Phys. Rev. B 53 13121 (1996)
  24. Käckell P, Furthmüller J, Bechstedt F Surf. Sci. 352-354 55 (1996)
  25. Catellani A, Galli G, Gygi F Phys. Rev. Lett. 77 5090 (1996)
  26. Kaplan R Surf. Sci. 215 111 (1989); J. Vac. Sci. Technol. A 6 829 (1988)
  27. Shek M L Surf. Sci. 349 317 (1996)
  28. Semond F, Thése de Doctorat (Orsay: Universite de Paris-XI, 1996)
  29. Soukiassian P et al. Phys. Rev. Lett. 78 907 (1997)
  30. Douillard L, Semond F, Aristov V Yu et al. Mat. Sci. Forum 264-268 379 (1998)
  31. Catellani A et al. Phys. Rev. B 57 12255 (1998)
  32. Lu W, Krüger P, Pollmann J Phys. Rev. Lett. 81 2292 (1998)
  33. Yoshinobu T et al. Appl. Phys. Lett. 59 2844 (1991)
  34. Soukiassian P, Aristov V Yu, Douillard L et al. Phys. Rev. Lett. 82 3721 (1999): Comment: Lu W, Krüger P, Pollmann J Phys. Rev. Lett. 82 3722 (1999, Reply)
  35. Aristov V Yu et al. Phys. Rev. B 60 16553 (1999)
  36. Joyce J J, Del Giudice M, Weaver J H J. Electron Spectrosc. Related Phenomena 49 31 (1989)
  37. Landemark E et al. Phys. Rev. Lett. 69 1588 (1992)
  38. Yeom H W et al. Phys. Rev. B 56 R15525 (1997); Surf. Sci. 433 392 (1999)
  39. Johansson L I, Owman F, Martensson P Phys. Rev. B 53 13793 (1996)
  40. Tromp R M, Smeenk R G, Saris F W Surf. Sci. 133 137 (1983)
  41. Derycke V, Thése de Doctorat (Orsay: Universite de Paris-XI, 2000)
  42. Aristov V Yu et al. Phys. Rev. Lett. 79 3700 (1997)
  43. Aristov V Yu et al. Omicron Newsletter 1 4 (1997)
  44. Lu W, Krüger P, Pollmann J Phys. Rev. B 61 2680 (2000)
  45. Catellani A, Galli G, Gygi F Appl. Phys. Lett. 72 1902 (1998)
  46. Bermudez V M Phys. Status Solidi B 202 447 (1997)
  47. Kaplan R, Bermudez V, in Properties of Silicon Carbide (EMIS Datareview Series, Vol. 13, Ed. G Harris, 1995) p. 101
  48. Soukiassian P, Semond F J. Phys. IV (Colloque, France) 7 (C6) 101 (1997)
  49. Pollmann J, Krüger P, Sabisch M Phys. Status Solidi B 202 421 (1997)
  50. Iijima S Nature 354 56 (1991)
  51. Surface Science Techniques (Eds J M Walls, R Smith, Oxford: Pergamon Press, 1994)
  52. Douilard L, Fauchoux O, Aristov V, Soukiassian P Appl. Surf. Sci. 166 220 (2000)
  53. Enriquez H, Derycke V, Aristov V Yu et al. Appl. Surf. Sci. 162-163 559 (2000)
  54. Haldane F D M J. Phys. C 14 2585 (1981)
  55. Voit J Phys. Rev. B 47 6740 (1993)
  56. Electron Spectroscopies Applied to Low-Dimensional Structures (Eds H I Starnberg, H P Hughes, Dordrecht: Kluwer Acad. Publ., 2000)
  57. Dardel B et al. Europhys. Lett. 24 687 (1983)
  58. Dardel B et al. Phys. Rev. Lett. 67 3144 (1991)
  59. Nakamura M et al. Phys. Rev. B 49 16191 (1994)
  60. Yan H, Smith A P, Jonsson H Surf. Sci. 330 265 (1995)
  61. Hara S et al. Surf. Sci. 357-358 436 (1996)
  62. Semond F et al. Phys. Rev. Lett. 77 2013 (1996)
  63. Lu W, Krüger P, Pollmann J Phys. Rev. B 60 2495 (1999)
  64. Lübbe M et al. J. Vac. Sci. Technol. A 16 3471 (1998)
  65. Yeom H W et al. Phys. Rev. B 58 10540 (1998)
  66. Yeom H W et al. Phys. Rev. B 61 R2417 (2000)
  67. Pizzagalli L et al. Phys. Rev. B 60 R5129 (1999)
  68. Shevlin S A, Fisher A J Appl. Surf. Sci. 162 94 (2000)
  69. Kitabatake M, Greene I E Appl. Phys. Lett. 69 2048 (1996); Jpn. J. Appl. Phys. Pt. 1 35 5261 (1996)
  70. Douillard L, Aristov V Yu, Semond F, Soukiassian P Surf. Sci. Lett. 401 L395 (1998)
  71. Soukiassian P et al. Phys. Rev. Lett. 79 2498 (1997)
  72. Semond F, Aristov V Yu, Douillard L et al. Mat. Sci. Forum 264-268 387 (1998)
  73. Aristov V Yu, Douillard L, Soukiassian P Surf. Sci. Lett. 440 L825 (1999)
  74. Bellina J J (Jr.), Zeller M V Appl. Surf. Sci. 25 380 (1986)
  75. Hara S et al. Surf. Sci. 273 437 (1992); Thin Solid Films 225 240 (1993)
  76. Fuyuki T, Yoshinobu T, Matsunami H Thin Solid Films 225 225 (1993)
  77. Hasegawa S et al. Surf. Sci. 206 L851 (1988)
  78. Bermudez V M, Kaplan R Phys. Rev. B 44 11149 (1991)
  79. Powers J M et al. Phys. Rev. B 44 11159 (1991)
  80. Long J P, Bermudez V M, Ramaker D E Phys. Rev. Lett. 76 991 (1996)
  81. Yeom H W et al. Phys. Rev. Lett. 83 1640 (1999); Shimomura M et al. Surf. Sci. 438 237 (1999)
  82. Craig B I, Smith P V Surf. Sci. 276 174 (1992); Erratum, ibid. 285 295 (1993)
  83. Badziag P Surf. Sci. 269/270 1152 (1992); Diamond Relat. Mater. 1 285 (1992)
  84. Halicioglu T Thin Solid Films 286 184 (1996)
  85. Dyson A J, Smith P V Surf. Sci. 396 24 (1998)
  86. Craig B I, Smith P V Surf. Sci. 256 L609 (1991)
  87. Pollmann J et al. Mater. Sci. Forum 338-342 369 (2000)
  88. Pollmann J et al. Appl. Surf. Sci. 104-105 1 (1996)
  89. Käckell P, Furthmüller J, Bechstedt F Appl. Surf. Sci. 104-105 45 (1996)
  90. Käckell P et al. Phys. Rev. B 54 10304 (1996)
  91. Gutierrez R, Frauenheim Th Mat. Res. Soc. Symp. 423 427 (1996)
  92. Derycke V, Soukiassian P, Mayne A, Dujardin G Surf. Sci. Lett. 446 L101 (2000)
  93. Derycke V et al. Phys. Rev. Lett. 81 5868 (1998)
  94. Catellani A, Galli G, Rigolli P L Phys. Rev. B 62 R4794 (2000)

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