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Issue 12, 2024
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1999

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Conferences and symposia


The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells

 a,  a,  a,  b,  c, d, e,  c,  c,  c,  c
a Department of Radiophysics, St. Petersburg State Technical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251, Russian Federation
b Donbass State Machinery Academy, Shkadinova str. 76, Kramatorsk, 343913, Ukraine
c Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
d Academic University, Khlopina str. 8, korp. 3, St. Petersburg, 194021, Russian Federation
e Vertically Integrated Systems (VI Systems GmbH), Hardenbergstr 7, Berlin, 10623, Germany
Fulltext pdf (469 KB)
Fulltext is also available at DOI: 10.1070/PU1999v042n04ABEH000453
PACS: 01.10.Fv
DOI: 10.1070/PU1999v042n04ABEH000453
URL: https://ufn.ru/en/articles/1999/4/g/
000080487700007
Citation: Vorob’ev L E, Firsov D A, Shalygin V A, Tulupenko V N, Ledentsov N N, Kop’ev P S, Ustinov V M, Shernyakov Yu M, Alferov Zh I "The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells" Phys. Usp. 42 391–396 (1999)
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Оригинал: Воробьев Л Е, Фирсов Д А, Шалыгин В А, Тулупенко В Н, Леденцов Н Н, Копьев П С, Устинов В М, Шерняков Ю М, Алферов Ж И «Перспективы создания источников излучения среднего ИК диапазона на основе внутризонных межуровневых переходов носителей заряда в инжекционных лазерных гетероструктурах с квантовыми точками и ямами» УФН 169 459–464 (1999); DOI: 10.3367/UFNr.0169.199904g.0459

References (13) Cited by (7) Similar articles (20) ↓

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