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The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells

 a,  a,  a,  b,  c, d, e,  c,  c,  c,  c
a Department of Radiophysics, St. Petersburg State Technical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251, Russian Federation
b Donbass State Machinery Academy, Shkadinova str. 76, Kramatorsk, 343913, Ukraine
c Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
d Academic University, Khlopina str. 8, korp. 3, St. Petersburg, 194021, Russian Federation
e Vertically Integrated Systems (VI Systems GmbH), Hardenbergstr 7, Berlin, 10623, Germany
PACS: 01.10.Fv
DOI: 10.1070/PU1999v042n04ABEH000453
URL: https://ufn.ru/en/articles/1999/4/g/
Citation: Vorob’ev L E, Firsov D A, Shalygin V A, Tulupenko V N, Ledentsov N N, Kop’ev P S, Ustinov V M, Shernyakov Yu M, Alferov Zh I "The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells" Phys. Usp. 42 391–396 (1999)
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T1 The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells
A1 Vorob’ev,L.E.
A1 Firsov,D.A.
A1 Shalygin,V.A.
A1 Tulupenko,V.N.
A1 Ledentsov,N.N.
A1 Kop’ev,P.S.
A1 Ustinov,V.M.
A1 Shernyakov,Yu.M.
A1 Alferov,Zh.I.
PB Physics-Uspekhi
PY 1999
FD 10 Apr, 1999
JF Physics-Uspekhi
JO Phys. Usp.
VO 42
IS 4
SP 391-396
DO 10.1070/PU1999v042n04ABEH000453
LK https://ufn.ru/en/articles/1999/4/g/

Оригинал: Воробьев Л Е, Фирсов Д А, Шалыгин В А, Тулупенко В Н, Леденцов Н Н, Копьев П С, Устинов В М, Шерняков Ю М, Алферов Ж И «Перспективы создания источников излучения среднего ИК диапазона на основе внутризонных межуровневых переходов носителей заряда в инжекционных лазерных гетероструктурах с квантовыми точками и ямами» УФН 169 459–464 (1999); DOI: 10.3367/UFNr.0169.199904g.0459

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