The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells

L.E. Vorob’ev^a, D.A. Firsov^a, V.A. Shalygin^a, V.N. Tulupenko^b, N.N. Ledentsov^c, d, e, P.S. Kop’ev^c, V.M. Ustinov^c, Yu.M. Shernyakov^c, Zh.I. Alferov^c
^aDepartment of Radiophysics, St. Petersburg State Technical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251, Russian Federation
^bDonbass State Machinery Academy, Shkadinova str. 76, Kramatorsk, 343913, Ukraine
^cIoffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
^dAcademic University, Khlopina str. 8, korp. 3, St. Petersburg, 194021, Russian Federation
^eVertically Integrated Systems (VI Systems GmbH), Hardenbergstr 7, Berlin, 10623, Germany

PACS: 01.10.Fv
DOI: 10.1070/PU1999v042n04ABEH000453
URL: https://ufn.ru/en/articles/1999/4/g/
Web of Science

000080487700007
Citation: Vorob’ev L E, Firsov D A, Shalygin V A, Tulupenko V N, Ledentsov N N, Kop’ev P S, Ustinov V M, Shernyakov Yu M, Alferov Zh I "The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells" Phys. Usp. 42 391–396 (1999)

BibTexBibNote ® (generic)BibNote ® (RIS)

MedlineRefWorks

PT Journal Article
TI The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells
AU Vorob’ev L E
FAU Vorob’ev LE
AU Firsov D A
FAU Firsov DA
AU Shalygin V A
FAU Shalygin VA
AU Tulupenko V N
FAU Tulupenko VN
AU Ledentsov N N
FAU Ledentsov NN
AU Kop’ev P S
FAU Kop’ev PS
AU Ustinov V M
FAU Ustinov VM
AU Shernyakov Yu M
FAU Shernyakov YM
AU Alferov Zh I
FAU Alferov ZI
DP 10 Apr, 1999
TA Phys. Usp.
VI 42
IP 4
PG 391-396
RX 10.1070/PU1999v042n04ABEH000453
URL https://ufn.ru/en/articles/1999/4/g/
SO Phys. Usp. 1999 Apr 10;42(4):391-396

Оригинал: Воробьев Л Е, Фирсов Д А, Шалыгин В А, Тулупенко В Н, Леденцов Н Н, Копьев П С, Устинов В М, Шерняков Ю М, Алферов Ж И «Перспективы создания источников излучения среднего ИК диапазона на основе внутризонных межуровневых переходов носителей заряда в инжекционных лазерных гетероструктурах с квантовыми точками и ямами» УФН 169 459–464 (1999); DOI: 10.3367/UFNr.0169.199904g.0459