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The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells

 a,  a,  a,  b,  c, d, e,  c,  c,  c,  c
a Department of Radiophysics, St. Petersburg State Technical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251, Russian Federation
b Donbass State Machinery Academy, Shkadinova str. 76, Kramatorsk, 343913, Ukraine
c Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
d Academic University, Khlopina str. 8, korp. 3, St. Petersburg, 194021, Russian Federation
e Vertically Integrated Systems (VI Systems GmbH), Hardenbergstr 7, Berlin, 10623, Germany
PACS: 01.10.Fv
DOI: 10.1070/PU1999v042n04ABEH000453
URL: https://ufn.ru/en/articles/1999/4/g/
Citation: Vorob’ev L E, Firsov D A, Shalygin V A, Tulupenko V N, Ledentsov N N, Kop’ev P S, Ustinov V M, Shernyakov Yu M, Alferov Zh I "The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells" Phys. Usp. 42 391–396 (1999)
BibTexBibNote ® (generic)BibNote ® (RIS) MedlineRefWorks
PT Journal Article
TI The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells
AU Vorob’ev L E
FAU Vorob’ev LE
AU Firsov D A
FAU Firsov DA
AU Shalygin V A
FAU Shalygin VA
AU Tulupenko V N
FAU Tulupenko VN
AU Ledentsov N N
FAU Ledentsov NN
AU Kop’ev P S
FAU Kop’ev PS
AU Ustinov V M
FAU Ustinov VM
AU Shernyakov Yu M
FAU Shernyakov YM
AU Alferov Zh I
FAU Alferov ZI
DP 10 Apr, 1999
TA Phys. Usp.
VI 42
IP 4
PG 391-396
RX 10.1070/PU1999v042n04ABEH000453
URL https://ufn.ru/en/articles/1999/4/g/
SO Phys. Usp. 1999 Apr 10;42(4):391-396

Оригинал: Воробьев Л Е, Фирсов Д А, Шалыгин В А, Тулупенко В Н, Леденцов Н Н, Копьев П С, Устинов В М, Шерняков Ю М, Алферов Ж И «Перспективы создания источников излучения среднего ИК диапазона на основе внутризонных межуровневых переходов носителей заряда в инжекционных лазерных гетероструктурах с квантовыми точками и ямами» УФН 169 459–464 (1999); DOI: 10.3367/UFNr.0169.199904g.0459

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