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The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells

 a,  a,  a,  b,  c, d, e,  c,  c,  c,  c
a Department of Radiophysics, St. Petersburg State Technical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251, Russian Federation
b Donbass State Machinery Academy, Shkadinova str. 76, Kramatorsk, 343913, Ukraine
c Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
d Academic University, Khlopina str. 8, korp. 3, St. Petersburg, 194021, Russian Federation
e Vertically Integrated Systems (VI Systems GmbH), Hardenbergstr 7, Berlin, 10623, Germany
PACS: 01.10.Fv
DOI: 10.1070/PU1999v042n04ABEH000453
URL: https://ufn.ru/en/articles/1999/4/g/
Citation: Vorob’ev L E, Firsov D A, Shalygin V A, Tulupenko V N, Ledentsov N N, Kop’ev P S, Ustinov V M, Shernyakov Yu M, Alferov Zh I "The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells" Phys. Usp. 42 391–396 (1999)
BibTexBibNote ® (generic) BibNote ® (RIS)MedlineRefWorks
TY JOUR
TI The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells
AU Vorob’ev, L. E.
AU Firsov, D. A.
AU Shalygin, V. A.
AU Tulupenko, V. N.
AU Ledentsov, N. N.
AU Kop’ev, P. S.
AU Ustinov, V. M.
AU Shernyakov, Yu. M.
AU Alferov, Zh. I.
PB Physics-Uspekhi
PY 1999
JO Physics-Uspekhi
JF Physics-Uspekhi
JA Phys. Usp.
VL 42
IS 4
SP 391-396
UR https://ufn.ru/en/articles/1999/4/g/
ER https://doi.org/10.1070/PU1999v042n04ABEH000453

Оригинал: Воробьев Л Е, Фирсов Д А, Шалыгин В А, Тулупенко В Н, Леденцов Н Н, Копьев П С, Устинов В М, Шерняков Ю М, Алферов Ж И «Перспективы создания источников излучения среднего ИК диапазона на основе внутризонных межуровневых переходов носителей заряда в инжекционных лазерных гетероструктурах с квантовыми точками и ямами» УФН 169 459–464 (1999); DOI: 10.3367/UFNr.0169.199904g.0459

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