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The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells

 a,  a,  a,  b,  c, d, e,  c,  c,  c,  c
a Department of Radiophysics, St. Petersburg State Technical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251, Russian Federation
b Donbass State Machinery Academy, Shkadinova str. 76, Kramatorsk, 343913, Ukraine
c Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
d Academic University, Khlopina str. 8, korp. 3, St. Petersburg, 194021, Russian Federation
e Vertically Integrated Systems (VI Systems GmbH), Hardenbergstr 7, Berlin, 10623, Germany
Text can be downloaded in Russian. English translation is available on IOP Science.
PACS: 01.10.Fv
DOI: 10.1070/PU1999v042n04ABEH000453
URL: https://ufn.ru/en/articles/1999/4/g/
Citation: Vorob’ev L E, Firsov D A, Shalygin V A, Tulupenko V N, Ledentsov N N, Kop’ev P S, Ustinov V M, Shernyakov Yu M, Alferov Zh I "The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells" Phys. Usp. 42 391–396 (1999)
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Оригинал: Воробьев Л Е, Фирсов Д А, Шалыгин В А, Тулупенко В Н, Леденцов Н Н, Копьев П С, Устинов В М, Шерняков Ю М, Алферов Ж И «Перспективы создания источников излучения среднего ИК диапазона на основе внутризонных межуровневых переходов носителей заряда в инжекционных лазерных гетероструктурах с квантовыми точками и ямами» УФН 169 459–464 (1999); DOI: 10.3367/UFNr.0169.199904g.0459

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