Atomic migration and related changes in defect concentration and structure due to electronic subsystem excitations in semiconductors

Exciting the electronic subsystem of a semiconductor via photoionization or ionization by charged particles, or, alternatively, injecting nonequilibrium charge carriers into a semiconductor stimulates atomic migration, generates new structural defects, and modifies the nature of those present. These effects change the major electrical and physical parameters of semiconductors, in particular of those crucial for modern solid-state electronics. Current data on the subject are presented and discussed.

PACS: 66.30.Fq, 66.30.Lw, 66.90.r, 78.50.Ge (all)
DOI: 10.1070/PU1997v040n04ABEH000228
URL: https://ufn.ru/en/articles/1997/4/c/
Web of Science

A1997XB47600003
Citation: Vavilov V S "Atomic migration and related changes in defect concentration and structure due to electronic subsystem excitations in semiconductors" Phys. Usp. 40 387–392 (1997)

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Оригинал: Вавилов В С «Миграция атомов в полупроводниках и изменения числа и структуры дефектов, инициируемые возбуждением электронной подсистемы» УФН 167 407–412 (1997); DOI: 10.3367/UFNr.0167.199704c.0407

References (39) Cited by (19) Similar articles (20) ↓

V.S. Vavilov “Physics and applications of wide bandgap semiconductors” Phys. Usp. 37 269–277 (1994)
B.N. Mukashev, Kh.A. Abdullin, Yu.V. Gorelkinskii “Metastable and bistable defects in silicon” Phys. Usp. 43 139–150 (2000)
V.S. Vavilov “The nature and energy spectrum of radiation defects in semiconductors” Sov. Phys. Usp. 7 797–808 (1965)
V.V. Kirsanov, A.N. Orlov “Computer simulation of the atomic structure of defects in metals” Sov. Phys. Usp. 27 106–133 (1984)
M.I. Klinger, Ch.B. Lushchik et al “Defect formation in solids by decay of electronic excitations” Sov. Phys. Usp. 28 994–1014 (1985)
V.S. Vavilov “Diamond in solid state electronics” Phys. Usp. 40 15–20 (1997)
S.M. Klotsman “Impurity states and diffusion in metal grain boundaries” Sov. Phys. Usp. 33 (1) 55–78 (1990)
V.S. Vavilov “Radiative recombination in semiconductors” Sov. Phys. Usp. 2 455–464 (1959)
V.S. Vavilov, E.A. Konorova “Semiconducting diamonds” Sov. Phys. Usp. 19 301–316 (1976)
I.A. Baranov, Yu.V. Martynenko et al “Inelastic sputtering of solids by ions” Sov. Phys. Usp. 31 1015–1034 (1988)
B.K. Vainshtein “Electron microscopy at atomic resolution” Sov. Phys. Usp. 30 393–419 (1987)
G.S. Buberman “The band structure of diamond” Sov. Phys. Usp. 14 180–196 (1971)
B.M. Smirnov “Scaling method in atomic and molecular physics” Phys. Usp. 44 1229–1253 (2001)
B.Kh. Bairamov, V.A. Voitenko, I.P. Ipatova “Light scattering from electron-density fluctuations in multivalley semiconductors and metals” Phys. Usp. 36 (5) 392–435 (1993)
V.M. Arutyunyan “Physical properties of the semiconductor-electrolyte interface” Sov. Phys. Usp. 32 521–542 (1989)
R.A. Andrievski “Hydrogen in nanostructures” Phys. Usp. 50 691–704 (2007)
M.V. Koval’chuk, V.G. Kohn “X-ray standing waves—a new method of studying the structure of crystals” Sov. Phys. Usp. 29 426–446 (1986)
G.L. Belen’kii, V.B. Stopachinskii “Electronic and vibrational spectra of III-VI layered semiconductors” Sov. Phys. Usp. 26 497–517 (1983)
E.V. Suvorov, I.A. Smirnova “X-ray diffraction imaging of defects in topography (microscopy) studies” Phys. Usp. 58 833–849 (2015)
G.F. Drukarev, V.D. Ob’edkov “Polarization phenomena in electronic and atomic collisions” Sov. Phys. Usp. 22 236–251 (1979)

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