Exciting the electronic subsystem of a semiconductor via photoionization or ionization by charged particles, or, alternatively, injecting nonequilibrium charge carriers into a semiconductor stimulates atomic migration, generates new structural defects, and modifies the nature of those present. These effects change the major electrical and physical parameters of semiconductors, in particular of those crucial for modern solid-state electronics. Current data on the subject are presented and discussed.

PACS: 66.30.Fq, 66.30.Lw, 66.90.r, 78.50.Ge (all) DOI: 10.1070/PU1997v040n04ABEH000228 URL: https://ufn.ru/en/articles/1997/4/c/ A1997XB47600003 Citation: Vavilov V S "Atomic migration and related changes in defect concentration and structure due to electronic subsystem excitations in semiconductors" Phys. Usp. 40 387–392 (1997) BibTex BibNote ® (generic)BibNote ® (RIS)MedlineRefWorks %0 Journal Article %T Atomic migration and related changes in defect concentration and structure due to electronic subsystem excitations in semiconductors %A V. S. Vavilov %I Physics-Uspekhi %D 1997 %J Phys. Usp. %V 40 %N 4 %P 387-392 %U https://ufn.ru/en/articles/1997/4/c/ %U https://doi.org/10.1070/PU1997v040n04ABEH000228 Оригинал: Вавилов В С «Миграция атомов в полупроводниках и изменения числа и структуры дефектов, инициируемые возбуждением электронной подсистемы» УФН 167 407–412 (1997); DOI: 10.3367/UFNr.0167.199704c.0407