Exciting the electronic subsystem of a semiconductor via photoionization or ionization by charged particles, or, alternatively, injecting nonequilibrium charge carriers into a semiconductor stimulates atomic migration, generates new structural defects, and modifies the nature of those present. These effects change the major electrical and physical parameters of semiconductors, in particular of those crucial for modern solid-state electronics. Current data on the subject are presented and discussed.

PACS: 66.30.Fq, 66.30.Lw, 66.90.r, 78.50.Ge (all) DOI: 10.1070/PU1997v040n04ABEH000228 URL: https://ufn.ru/en/articles/1997/4/c/ A1997XB47600003 Citation: Vavilov V S "Atomic migration and related changes in defect concentration and structure due to electronic subsystem excitations in semiconductors" Phys. Usp. 40 387–392 (1997) BibTexBibNote ® (generic)BibNote ® (RIS)Medline RefWorks RT Journal T1 Atomic migration and related changes in defect concentration and structure due to electronic subsystem excitations in semiconductors A1 Vavilov,V.S. PB Physics-Uspekhi PY 1997 FD 10 Apr, 1997 JF Physics-Uspekhi JO Phys. Usp. VO 40 IS 4 SP 387-392 DO 10.1070/PU1997v040n04ABEH000228 LK https://ufn.ru/en/articles/1997/4/c/ Оригинал: Вавилов В С «Миграция атомов в полупроводниках и изменения числа и структуры дефектов, инициируемые возбуждением электронной подсистемы» УФН 167 407–412 (1997); DOI: 10.3367/UFNr.0167.199704c.0407