Atomic structures on a GaAs(001) surface grown by molecular beam epitaxy

R.Z. Bakhtizin^a, T. Hashizume^b, Q.-K. Xue^c, T. Sakurai^c
^aDepartment of Physical Electronics, Bashkir State University, Ufa, Russian Federation
^bHitachi Advanced Research Laboratory, Hitachi Ltd., Hatoyama, Saitama, Japan
^cInstitute for Materials Research, Tohoku University, 2-1-1 Katahira, Sendai, 980-77, Japan

A unique apparatus for in-situ atomic-resolution study of solid state structures grown by molecular beam epitaxy (MBE) is developed, in which a scanning tunneling microscope (STM) is combined with an MBE chamber within the same vacuum system. The utility of the apparatus is demonstrated by examining atomic structures on a molecular-beam-epitaxial GaAs(001) surface over a wide range of [As]/[Ga] ratios. By varying the As surface coverage, the 2×4 — α, β, γ and c(4×4) phases are examined in detail. High-resolution STM images indicate that 2×4 — α, β, and γ phases in the outermost surface layer have essentially the same unit cell consisting of two As dimers and two As dimer vacancies. Using the STM images, reflection high-energy electron diffraction (RHEED) patterns and dynamical RHEED calculations, the existing structural models for the 2×4 phases are analysed and a new model of the As-rich GaAs(001) surface is proposed, found to be consistent with most of the previous observations.

PACS: 61.14.Hg, 61.16.Di, 68.55.Bd
DOI: 10.1070/PU1997v040n11ABEH000309
URL: https://ufn.ru/en/articles/1997/11/f/
Web of Science

000071302300006
Citation: Bakhtizin R Z, Hashizume T, Xue Q-K, Sakurai T "Atomic structures on a GaAs(001) surface grown by molecular beam epitaxy" Phys. Usp. 40 1175–1187 (1997)

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Оригинал: Бахтизин Р З, Хашицуме Т, Щуе Ч-К, Сакурай Т «Атомные структуры на поверхности GaAs(001), выращенной методами молекулярно-лучевой эпитаксии» УФН 167 1227–1241 (1997); DOI: 10.3367/UFNr.0167.199711f.1227

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