The current status of the subject of charged dislocations in germanium and silicon semiconductor crystals is discussed. Equilibrium properties of plastically deformed germanium and silicon are described by a phenomenological model of the electron spectrum of charged dislocations in these crystals. This model is a development of the Shockley-Read theory and it postulates two acceptor levels, E₁ and E₂ and also one donor level, ε₁. Moreover, it is necessary to introduce a finite capacity C₁ of the acceptor level E₁. The adopted model provides a self-consistent description of the main electrical properties of plastically deformed germanium and silicon. These properties include the conductivity of the crystals in the n and p states, details of inversion of the type of conduction caused by dislocations, some features of the current-voltage characteristics of crystals with oriented sets of dislocations, simplest relaxation phenomena, etc. In germanium, the level E₁ is located near E₁ approx 0,1 eV above the top of the valence band and its capacity is C₁ lesssim 0.1. The corresponding parameters of silicon are E₁ approx 0,4 eV and C₁ lesssim 0.1. It is worth noting the smallness of the capacitiy C₁, which justifies inclusion of this additional parameter among the characteristics of the electron spectrum of dislocations.

PACS: 61.72.Lk, 71.55.Cn, 72.80.Cw (all) DOI: 10.1070/PU1995v038n08ABEH000099 URL: https://ufn.ru/en/articles/1995/8/b/ A1995TF94900002 Citation: Shikin V B, Shikina Yu V "Charged dislocations in semiconductor crystals" Phys. Usp. 38 845–875 (1995) BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks Оригинал: Шикин В Б, Шикина Ю В «Заряженные дислокации в полупроводниковых кристаллах» УФН 165 887–917 (1995); DOI: 10.3367/UFNr.0165.199508b.0887