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Inverted contact in semiconductors—a new inhomogeneous structure with a twodimensional gas of zero-mass electrons

 a,
a Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
Fulltext pdf (102 KB)
Fulltext is also available at DOI: 10.1070/PU1986v029n06ABEH003428
PACS: 71.20.Nr, 73.21.Fg (all)
DOI: 10.1070/PU1986v029n06ABEH003428
URL: https://ufn.ru/en/articles/1986/6/j/
Citation: Volkov B A, Pankratov O A "Inverted contact in semiconductors—a new inhomogeneous structure with a twodimensional gas of zero-mass electrons" Sov. Phys. Usp. 29 579–581 (1986)
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Оригинал: Волков Б А, Панкратов О А «Инверсный контакт полупроводников — новая неоднородная структура с двумерным газом электронов нулевой массы» УФН 149 339–342 (1986); DOI: 10.3367/UFNr.0149.198606j.0339

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  1. B.A. Volkov, O.A. Pankratov “Electronic structure of quasicubic crystals: energy bands, dielectric properties, and defects in narrow-gap semiconductors.Sov. Phys. Usp. 29 575–577 (1986)
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  19. L.V. Al’tshuler “Progress in High-pressure PhysicsSov. Phys. Usp. 13 301–303 (1970)
  20. V.B. Braginskii “Detectors of Gravitational RadiationSov. Phys. Usp. 13 303–303 (1970)

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