Inverted contact in semiconductors—a new inhomogeneous structure with a twodimensional gas of zero-mass electrons
B.A. Volkova,
O.A. Pankratov aLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
PACS:71.20.Nr, 73.21.Fg (all) DOI:10.1070/PU1986v029n06ABEH003428 URL: https://ufn.ru/en/articles/1986/6/j/ Citation: Volkov B A, Pankratov O A "Inverted contact in semiconductors—a new inhomogeneous structure with a twodimensional gas of zero-mass electrons" Sov. Phys. Usp.29 579–581 (1986)
PT Journal Article
TI Inverted contact in semiconductors—a new inhomogeneous structure with a twodimensional gas of zero-mass electrons
AU Volkov B A
FAU Volkov BA
AU Pankratov O A
FAU Pankratov OA
DP 10 Jun, 1986
TA Phys. Usp.
VI 29
IP 6
PG 579-581
RX 10.1070/PU1986v029n06ABEH003428
URL https://ufn.ru/en/articles/1986/6/j/
SO Phys. Usp. 1986 Jun 10;29(6):579-581