Inverted contact in semiconductors—a new inhomogeneous structure with a twodimensional gas of zero-mass electrons
B.A. Volkova,
O.A. Pankratov aLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
PACS:71.20.Nr, 73.21.Fg (all) DOI:10.1070/PU1986v029n06ABEH003428 URL: https://ufn.ru/en/articles/1986/6/j/ Citation: Volkov B A, Pankratov O A "Inverted contact in semiconductors—a new inhomogeneous structure with a twodimensional gas of zero-mass electrons" Sov. Phys. Usp.29 579–581 (1986)
RT Journal
T1 Inverted contact in semiconductors—a new inhomogeneous structure with a twodimensional gas of zero-mass electrons
A1 Volkov,B.A.
A1 Pankratov,O.A.
PB Physics-Uspekhi
PY 1986
FD 10 Jun, 1986
JF Physics-Uspekhi
JO Phys. Usp.
VO 29
IS 6
SP 579-581
DO 10.1070/PU1986v029n06ABEH003428
LK https://ufn.ru/en/articles/1986/6/j/