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Inverted contact in semiconductors—a new inhomogeneous structure with a twodimensional gas of zero-mass electrons

 a,
a Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
Text can be downloaded in Russian. English translation is available here.
PACS: 71.20.Nr, 73.21.Fg (all)
DOI: 10.1070/PU1986v029n06ABEH003428
URL: https://ufn.ru/en/articles/1986/6/j/
Citation: Volkov B A, Pankratov O A "Inverted contact in semiconductors—a new inhomogeneous structure with a twodimensional gas of zero-mass electrons" Sov. Phys. Usp. 29 579–581 (1986)
BibTexBibNote ® (generic)BibNote ® (RIS)Medline RefWorks
RT Journal
T1 Inverted contact in semiconductors—a new inhomogeneous structure with a twodimensional gas of zero-mass electrons
A1 Volkov,B.A.
A1 Pankratov,O.A.
PB Physics-Uspekhi
PY 1986
FD 10 Jun, 1986
JF Physics-Uspekhi
JO Phys. Usp.
VO 29
IS 6
SP 579-581
DO 10.1070/PU1986v029n06ABEH003428
LK https://ufn.ru/en/articles/1986/6/j/

Оригинал: Волков Б А, Панкратов О А «Инверсный контакт полупроводников — новая неоднородная структура с двумерным газом электронов нулевой массы» УФН 149 339–342 (1986); DOI: 10.3367/UFNr.0149.198606j.0339

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