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Galvanomagnetic properties of a 2D electron layer in silicon under conditions of a quantized Hall resistance

 a,
a Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
Fulltext pdf (92 KB)
Fulltext is also available at DOI: 10.1070/PU1985v028n07ABEH003876
PACS: 72.20.My, 73.40.Qv, 73.43.Fj (all)
DOI: 10.1070/PU1985v028n07ABEH003876
URL: https://ufn.ru/en/articles/1985/7/g/
Citation: Pudalov V M, Semenchinskii S G "Galvanomagnetic properties of a 2D electron layer in silicon under conditions of a quantized Hall resistance" Sov. Phys. Usp. 28 634–635 (1985)
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Оригинал: Пудалов В М, Семенчинский С Г «Изучение гальвано-магнитных свойств двумерного слоя электронов в кремнии в условиях квантования холловского сопротивления» УФН 146 534–536 (1985); DOI: 10.3367/UFNr.0146.198507g.0534

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