Galvanomagnetic properties of a 2D electron layer in silicon under conditions of a quantized Hall resistance
V.M. Pudalova,
S.G. Semenchinskii aLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
PACS:72.20.My, 73.40.Qv, 73.43.Fj (all) DOI:10.1070/PU1985v028n07ABEH003876 URL: https://ufn.ru/en/articles/1985/7/g/ Citation: Pudalov V M, Semenchinskii S G "Galvanomagnetic properties of a 2D electron layer in silicon under conditions of a quantized Hall resistance" Sov. Phys. Usp.28 634–635 (1985)
@article{Pudalov:1985,author = {V. M. Pudalov and S. G. Semenchinskii},title = {Galvanomagnetic properties of a 2D electron layer in silicon under conditions of a quantized Hall resistance},publisher = {Physics-Uspekhi},year = {1985},journal = {Phys. Usp.},volume = {28},number = {7},pages = {634-635},url = {https://ufn.ru/en/articles/1985/7/g/},doi = {10.1070/PU1985v028n07ABEH003876}}