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Galvanomagnetic properties of a 2D electron layer in silicon under conditions of a quantized Hall resistance
a Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
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PACS: 72.20.My, 73.40.Qv, 73.43.Fj ()
DOI: URL: https://ufn.ru/en/articles/1985/7/g/ Citation: Pudalov V M, Semenchinskii S G "Galvanomagnetic properties of a 2D electron layer in silicon under conditions of a quantized Hall resistance" Sov. Phys. Usp. 28 634–635 (1985) Оригинал: Пудалов В М, Семенчинский С Г «Изучение гальвано-магнитных свойств двумерного слоя электронов в кремнии в условиях квантования холловского сопротивления» УФН 146 534–536 (1985); |
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