Galvanomagnetic properties of a 2D electron layer in silicon under conditions of a quantized Hall resistance
V.M. Pudalova,
S.G. Semenchinskii aLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
PACS:72.20.My, 73.40.Qv, 73.43.Fj (all) DOI:10.1070/PU1985v028n07ABEH003876 URL: https://ufn.ru/en/articles/1985/7/g/ Citation: Pudalov V M, Semenchinskii S G "Galvanomagnetic properties of a 2D electron layer in silicon under conditions of a quantized Hall resistance" Sov. Phys. Usp.28 634–635 (1985)
PT Journal Article
TI Galvanomagnetic properties of a 2D electron layer in silicon under conditions of a quantized Hall resistance
AU Pudalov V M
FAU Pudalov VM
AU Semenchinskii S G
FAU Semenchinskii SG
DP 10 Jul, 1985
TA Phys. Usp.
VI 28
IP 7
PG 634-635
RX 10.1070/PU1985v028n07ABEH003876
URL https://ufn.ru/en/articles/1985/7/g/
SO Phys. Usp. 1985 Jul 10;28(7):634-635