Exoelectronic emission of semiconductors

CONTENTS
1. Introduction. Concept of Exoelectronic Emission. Structure Sensitivity of the Effect 697
2. Instruments and Method of Registering the Parameters of Exoelectronic Emission 699
3. Physical Nature of Exoelectronic Emission 700
4. Exoelectronic Emission of Elemental Semiconductors 701
5. Exoelectronic Emission of Semiconductor Compounds 704
6. Conclusion 705
References 706

PACS: 79.75.+g
DOI: 10.1070/PU1976v019n08ABEH005287
URL: https://ufn.ru/en/articles/1976/8/d/
Citation: Mints R I, Mil’man I I, Kryuk V I "Exoelectronic emission of semiconductors" Sov. Phys. Usp. 19 697–707 (1976)

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RT Journal
T1 Exoelectronic emission of semiconductors
A1 Mints,R.I.
A1 Mil’man,I.I.
A1 Kryuk,V.I.
PB Physics-Uspekhi
PY 1976
FD 10 Aug, 1976
JF Physics-Uspekhi
JO Phys. Usp.
VO 19
IS 8
SP 697-707
DO 10.1070/PU1976v019n08ABEH005287
LK https://ufn.ru/en/articles/1976/8/d/

Оригинал: Минц Р И, Мильман И И, Крюк В И «Экзоэлектронная эмиссия полупроводников» УФН 119 749–766 (1976); DOI: 10.3367/UFNr.0119.197608g.0749