Exoelectronic emission of semiconductors

CONTENTS
1. Introduction. Concept of Exoelectronic Emission. Structure Sensitivity of the Effect 697
2. Instruments and Method of Registering the Parameters of Exoelectronic Emission 699
3. Physical Nature of Exoelectronic Emission 700
4. Exoelectronic Emission of Elemental Semiconductors 701
5. Exoelectronic Emission of Semiconductor Compounds 704
6. Conclusion 705
References 706

PACS: 79.75.+g
DOI: 10.1070/PU1976v019n08ABEH005287
URL: https://ufn.ru/en/articles/1976/8/d/
Citation: Mints R I, Mil’man I I, Kryuk V I "Exoelectronic emission of semiconductors" Sov. Phys. Usp. 19 697–707 (1976)

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PT Journal Article
TI Exoelectronic emission of semiconductors
AU Mints R I
FAU Mints RI
AU Mil’man I I
FAU Mil’man II
AU Kryuk V I
FAU Kryuk VI
DP 10 Aug, 1976
TA Phys. Usp.
VI 19
IP 8
PG 697-707
RX 10.1070/PU1976v019n08ABEH005287
URL https://ufn.ru/en/articles/1976/8/d/
SO Phys. Usp. 1976 Aug 10;19(8):697-707

Оригинал: Минц Р И, Мильман И И, Крюк В И «Экзоэлектронная эмиссия полупроводников» УФН 119 749–766 (1976); DOI: 10.3367/UFNr.0119.197608g.0749