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Issue 12, 2024
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1962

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March

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Reviews of topical problems


TUNNEL DIODES

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Introduction 430
1. Operating Principle of Tunnel Diode 430
2. Tunnel Effect in Semiconductors 432
3. Quantitative Study of the Tunnel Effect in p-n Junctions 433
4. Physical Principles Underlying the Manufacture of Tunnel Diodes 434
5. Parameters Characterizing the Tunnel Diode 437
6. Tunnel Diode Construction 442
7. Operating Conditions and Stability of Tunnel-diode Circuits 442
8. Measurement of Tunnel-diode Parameters 443
9. Tunnel-diode Generators 446
10. Tunnel-diode Amplifiers 449
11. Other Applications of Tunnel Diodes 455
12. Use of Tunnel Diodes for Physical Research 457
Cited Literature 457

Fulltext pdf (2.8 MB)
Fulltext is also available at DOI: 10.1070/PU1962v005n03ABEH003425
PACS: 85.30.Mn, 73.40.Gk, 73.40.Kp, 85.30.De (all)
DOI: 10.1070/PU1962v005n03ABEH003425
URL: https://ufn.ru/en/articles/1962/3/c/
Citation: Fistul’ V I, Shvarts N Z "TUNNEL DIODES" Sov. Phys. Usp. 5 430–459 (1962)
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Оригинал: Фистуль В И, Шварц Н З «Туннельные диоды» УФН 77 109–160 (1962); DOI: 10.3367/UFNr.0077.196205c.0109

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