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Примеси с переменной валентностью в твердых растворах на основе теллурида свинца

 а,  б,  в
а Физический институт им. П.Н. Лебедева РАН, Ленинский проспект 53, Москва, 119991, Российская Федерация
б Московский государственный университет им. М.В.Ломоносова, Химический факультет, Ленинские горы, Москва, 119992, Российская Федерация
в Московский государственный университет имени М.В. Ломоносова, Физический факультет, Ленинские горы 1 стр. 2, Москва, 119991, Российская Федерация

Обобщены экспериментальные данные по свойствам примесных состояний в узкощелевых полупроводниках на основе теллурида свинца. Представлены теоретические модели, описывающие нетривиальные особенности этих примесных состояний. Рассмотрены прикладные аспекты проблемы, связанные с использованием указанных материалов в качестве высокочувствительных приемников излучения дальнего ИК-диапазона.

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English fulltext is available at DOI: 10.1070/PU2002v045n08ABEH001146
PACS: 71.23.An, 71.55.−i, 85.60.Gz (все)
DOI: 10.3367/UFNr.0172.200208b.0875
URL: https://ufn.ru/ru/articles/2002/8/b/
Цитата: Волков Б А, Рябова Л И, Хохлов Д Р "Примеси с переменной валентностью в твердых растворах на основе теллурида свинца" УФН 172 875–906 (2002)
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English citation: Volkov B A, Ryabova L I, Khokhlov D R “Mixed-valence impurities in lead telluride-based solid solutions” Phys. Usp. 45 819–846 (2002); DOI: 10.1070/PU2002v045n08ABEH001146

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