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Спектр и поляризация фотолюминесценции горячих электронов в полупроводниках

 а, , ,
а Физико-технический институт им. А.Ф. Иоффе РАН, Политехническая ул. 26, Санкт-Петербург, 194021, Российская Федерация

Дан обзор экспериментальных и теоретических работ, посвященных рекомбинационной фотолюминесценции свободных горячих электронов в полупроводниках (главным образом GaAs). Обсуждаются поляризационные характеристики, отражающие, в частности, эффект выстраивания электропов по импульсам линейно-поляризованным светом и влияние на эти характеристики гофрировки изоэнергетических поверхностей в валентной зоне. Спектральная зависимость линейной поляризации рассматривается в связи с различными механизмами энергетической релаксации горячих электронов. Рассмотрены эффекты деполяризации горячей фотолюминесценции в магнитном поле и методика определения времен энергетической релаксации, а также времен междолинпых переходов из анализа кривых деполяризации. Из спектра горячей фотолюминесценции получена функция распределения горячих электронов. Рассмотрены свойства рекомбинационной люминесценции горячих дырок, возникающих при освещении в спин-отщепленной зоне. Табл. 4, илл. 31, библиогр. ссылок 61 (69 назв.).

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English fulltext is available at DOI: 10.1070/PU1982v025n03ABEH004519
PACS: 78.55.Ds, 72.20.Jv
DOI: 10.3367/UFNr.0136.198203d.0459
URL: https://ufn.ru/ru/articles/1982/3/d/
Цитата: Захарченя Б П, Мирлин Д Н, Перель В И, Решина И И "Спектр и поляризация фотолюминесценции горячих электронов в полупроводниках" УФН 136 459–499 (1982)
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English citation: Zakharchenya B P, Mirlin D N, Perel’ V I, Reshina I I “Spectrum and polarization of hot-electron photoluminescence in semiconductors” Sov. Phys. Usp. 25 143–166 (1982); DOI: 10.1070/PU1982v025n03ABEH004519

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