T. Hashizume



Hitachi Advanced Research Laboratory, Hitachi Ltd.
Address: Hatoyama, Saitama, Japan


Articles

  1. R.Z. Bakhtizin, T. Hashizume, Q.-K. Xue, T. Sakurai “Atomic structures on a GaAs(001) surface grown by molecular beam epitaxyPhys. Usp. 40 1175–1187 (1997)
  2. R.Z. Bakhtizin, T. Hashizume, Sh. Wang, T. Sakurai “Scanning tunneling microscopy of fullerenes on metal and semiconductor surfacesPhys. Usp. 40 275–290 (1997)

See also: R.Z. Bakhtizin, T. Sakurai, Q.-K. Xue, Sh. Wang

PACS: 61.14.Hg, 61.16.Di, 68.55.Bd, 68.35.Bs, 61.16.Ch, 61.46.+w, 68.65.+g

© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions