Conferences and symposia. 70th anniversary of the E.K. Zavoisky physical-technical institute, Kazan scientific center of the Russian academy of sciences

Radio spectroscopy of the optically aligned spin states of color centers in silicon carbide

Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation

The unique quantum properties of the nitrogen-vacancy color centers (NV-centers) in diamond have motivated the search for similar color centers with enhancing properties in SiC. In this paper, experimental evidence is presented that vacancy-related spin centers in SiC not only have properties similar to those of diamond NV centers but also exhibit many additional properties, making these quantum systems promising for many applications in spintronics, sensorics, and quantum information processing at ambient conditions.

Fulltext is available at IOP
Keywords: spin centers, silicon vacancy-related centres, optical polarization of electron spins, magnetic resonance
PACS: 76.30.−v, 78.47.−p, 85.75.−d (all)
DOI: 10.3367/UFNe.2016.02.037755
Citation: Soltamov V A, Baranov P G "Radio spectroscopy of the optically aligned spin states of color centers in silicon carbide" Phys. Usp. 59 605–610 (2016)
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Received: 7th, March 2016, 4th, February 2016

Оригинал: Солтамов В А, Баранов П Г «Радиоспектроскопия оптически выстроенных спиновых состояний центров окраски в карбиде кремния» УФН 186 678–684 (2016); DOI: 10.3367/UFNr.2016.02.037755

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