Pavel Georgievich Baranov



Ioffe Institute
Address: ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
Phone: +7 (812) 297-22-45
Fax: +7 (812) 247-10-17
Website:


Articles

Citations

1 A.A. Lebedev, P.A. Ivanov, M.E. Levinshtein et alSiC-based electronics (100th anniversary of the Ioffe Institute)Phys. Usp. 62 754–794 (2019) 16
2 P.G. Baranov, A.M. Kalashnikova, V.I. Kozub et alSpintronics of semiconductor, metallic, dielectric, and hybrid structures (100th anniversary of the Ioffe Institute)Phys. Usp. 62 795–822 (2019) 27
3 V.A. Soltamov, P.G. Baranov “Radio spectroscopy of the optically aligned spin states of color centers in silicon carbidePhys. Usp. 59 605–610 (2016) 3

46
P.G. Baranov: total citation number of the papers published in Phys. Usp.

See also: K.P. Belov, A.A. Lebedev, R.V. Pisarev, P.A. Ivanov, V.A. Soltamov, D.R. Yakovlev, M. Bayer, I.A. Akimov, V.F. Sapega, A.V. Scherbakov, Yu.G. Kusrayev, V.L. Korenev, V.I. Kozub, A.M. Kalashnikova, M.E. Levinshtein

PACS: 85.75.-d, 81.05.ue, 81.10.-h, 85.30.-z, 75.30.Kz, 75.50.Bb, 75.50.Gg, 75.76.+j, 75.78.Jp, 76.70.Hb, 78.30.Fs, 78.55.Et, 76.30.-v, 78.47.-p

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