Pavel Georgievich Baranov

Ioffe Institute
Address: ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
Phone: +7 (812) 297-22-45
Fax: +7 (812) 247-10-17
Website: www.ioffe.ru

Articles

A.A. Lebedev, P.A. Ivanov, M.E. Levinshtein et al “SiC-based electronics (100th anniversary of the Ioffe Institute)” Phys. Usp. 62 754–794 (2019)
P.G. Baranov, A.M. Kalashnikova, V.I. Kozub et al “Spintronics of semiconductor, metallic, dielectric, and hybrid structures (100th anniversary of the Ioffe Institute)” Phys. Usp. 62 795–822 (2019)
V.A. Soltamov, P.G. Baranov “Radio spectroscopy of the optically aligned spin states of color centers in silicon carbide” Phys. Usp. 59 605–610 (2016)

See also: K.P. Belov, R.V. Pisarev, P.A. Ivanov, V.A. Soltamov, D.R. Yakovlev, A.V. Scherbakov, M. Bayer, I.A. Akimov, V.F. Sapega, A.A. Lebedev, Yu.G. Kusrayev, S.S. Nagalyuk, M.E. Levinshtein, E.N. Mokhov, V.L. Korenev

PACS: 85.75.-d, 81.05.ue, 81.10.-h, 85.30.-z, 75.30.Kz, 75.50.Bb, 75.50.Gg, 75.76.+j, 75.78.Jp, 76.70.Hb, 78.30.Fs, 78.55.Et, 76.30.-v, 78.47.-p