Ze Don Kvon



Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address: prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

Novosibirsk State University
Address: ul. Pirogovaá2, Novosibirsk, 630090, Russian Federation
Phone: +7 (3832) 30 32 44
Fax: +7 (3832) 39 71 01
Website:


Accepted articles

  1. Z.D. Kvon, D.A. Kozlov, E.B. Olshanetskii et alTopological insulator on the basis of HgTe”, accepted

Articles

  1. V.M. Pudalov, S.V. Iordanskii, A. Kashuba et alJoint scientific session of the Physical Sciences Division of the Russian Academy of Sciences and the Joint Physical Society of the Russian Federation ’Strongly correlated electrons in two-dimensional systems’ (26 October 2005)49 203–208 (2006)
  2. E.B. Olshanetskii, V. Renard, Z.D. Kvon et alInteraction effects in the transport and magnetotransport of two-dimensional electrons in AlGaAs/GaAs and Si/SiGe heterojunctions49 211–216 (2006)
  3. Z.D. Kvon, L.V. Litvin, V.A. Tkachenko, A.L. Aseev “One-electron transistors based on Coulomb blockade and quantum interference42 402–405 (1999)
  4. Z.D. Kvon, E.B. Olshanetskii, G.M. Gusev et alCoulomb-like mesoscopic conductance fluctuations in a 2D electron gas near the filling factor ν = 1/241 164–166 (1998)
  5. A.A. Bykov, Z.D. Kvon, E.B. Ol’shanskii et alQuasiballistic quantum interferometer38 217–219 (1995)
  6. Z.D. Kvon, I.G. Neizvestnyi, V.N. Ovsyuk “Effect of a surface superlattice on a two-dimensional electron gas28 528–530 (1985)

See also: V.L. Ginzburg, E.B. Olshanetskii, L.V. Litvin, A.L. Aseev, A.I. Toropov, A.V. Gurevich, G.A. Askar’yan, V. Renard, I.V. Gornyi, J.C. Portal, Yu.V. Kopaev, E.L. Feinberg, V.M. Pudalov, P.S. Kop’ev, A.K. Murtazaev

PACS: 01.10.Fv, 71.27.+a, 71.30.+h, 72.15.Rn, 73.23.Hb, 05.45.+b, 73.40.Gk, 07.60.Ly, 73.21.Cd, 73.20.At, 73.63.-b,

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