Olshanetskii Evgeny Borisovich



Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address: prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

Novosibirsk State Technical University
Address: pr. K. Marksa 20, Novosibirsk, 630092, Russian Federation
Phone: +7 (3832) 46 50 01
Fax: +7 (3832) 46 02 09, +7 (3832) 4
Website:


Articles

Citations

1 Gusev Gennadii Mikhailovich, Kvon Ze Don, Levin Aleksandr Dmitrievich et alThermopower in HgTe-based topological insulators and two-dimensional semimetalsPhys. Usp. 69 2–24 (2026)
2 Kvon Ze Don, Kozlov Dmitrii Andreevich, Olshanetsky Evgeny Borisovich et alTopological insulators based on HgTePhys. Usp. 63 629–647 (2020) 27
3 Pudalov V M, Iordanskii S V, Kashuba A et alJoint scientific session of the Physical Sciences Division of the Russian Academy of Sciences and the Joint Physical Society of the Russian Federation ’Strongly correlated electrons in two-dimensional systems’ (26 October 2005)Phys. Usp. 49 203–208 (2006) 1
4 Olshanetskii E B, Renard V, Kvon Z D et alInteraction effects in the transport and magnetotransport of two-dimensional electrons in AlGaAs/GaAs and Si/SiGe heterojunctionsPhys. Usp. 49 211–216 (2006) 1
5 Kvon Z D, Olshanetskii E B, Gusev G M et alCoulomb-like mesoscopic conductance fluctuations in a 2D electron gas near the filling factor ν = 1/2Phys. Usp. 41 164–166 (1998)

29
Olshanetskii Evgeny Borisovich: total citation number of the papers published in Phys. Usp.

See also: Kvon Ze Don, Gusev Gennadii Mikhailovich, Mikhailov Nikolai Nikolaevich, Toropov A I, Renard V, Gornyi I V, Portal J C, Ginzburg Vitalii Lazarevich, Pudalov Vladimir M, Maude D K, Izyumov Yurii A, Portal J C, Gantmakher Vsevolod F, Gurevich Aleksandr V, Askar’yan G A

PACS: 72.15.Jf, 72.20.Pa, 85.35.Be, 73.43.Qt, 73.63.Hs, 01.10.Fv, 71.27.+a, 71.30.+h, 72.15.Rn, 05.45.+b, 73.40.Gk

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