Evgeny Borisovich Olshanetskii

Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address: prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

Novosibirsk State University
Address: ul. Pirogova 2, Novosibirsk, 630090, Russian Federation
Phone: +7 (3832) 30 32 44
Fax: +7 (3832) 39 71 01
Website: www.nsu.ru

Articles

Z.D. Kvon, D.A. Kozlov, E.B. Olshanetsky et al “Topological insulators based on HgTe” 63 629–647 (2020)
V.M. Pudalov, S.V. Iordanskii, A. Kashuba et al “Joint scientific session of the Physical Sciences Division of the Russian Academy of Sciences and the Joint Physical Society of the Russian Federation ’Strongly correlated electrons in two-dimensional systems’ (26 October 2005)” 49 203–208 (2006)
E.B. Olshanetskii, V. Renard, Z.D. Kvon et al “Interaction effects in the transport and magnetotransport of two-dimensional electrons in AlGaAs/GaAs and Si/SiGe heterojunctions” 49 211–216 (2006)
Z.D. Kvon, E.B. Olshanetskii, G.M. Gusev et al “Coulomb-like mesoscopic conductance fluctuations in a 2D electron gas near the filling factor ν = 1/2” 41 164–166 (1998)

See also: Z.D. Kvon, G.M. Gusev, A.I. Toropov, J.C. Portal, V. Renard, I.V. Gornyi, V.L. Ginzburg, V.M. Pudalov, Yu.A. Izyumov, D.A. Kozlov, J.C. Portal, D.K. Maude, A. Kashuba, S.V. Iordanskii, V.F. Gantmakher

PACS: 73.43.Qt, 73.63.Hs, 01.10.Fv, 71.27.+a, 71.30.+h, 72.15.Rn, 05.45.+b, 73.40.Gk