Reviews of topical problems

Topological insulators based on HgTe

 a, b,  c, b,  a, b,  d,  c,  c
a Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
b Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russian Federation
c Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Lavrent'eva 13, Novosibirsk, 630090, Russian Federation
d Universidade de São Paulo, Instituto de Física, São Paulo, Brazil

The most interesting experimental results obtained in studies of 2D and 3D topological insulators (TIs) based on HgTe quantum wells and films are reviewed. In the case of 2D TIs, these include the observation of nonlocal ballistic and diffusion transport, the magnetic breakdown of 2D TIs, and an anomalous temperature dependence of edge-channel resistance. In 3D TIs, a record-setting high mobility (up to $5\times 10^5 $cm$^2 $V$^{-1}$ s$^{-1}$) of surface two-dimensional Dirac fermions (DFs) has been attained. This enabled determination of all of the TI's main parameters (volume gap and density of Dirac fermions on both of its surfaces) and provided information on the phase of the DF's Shubnikov—de Haas oscillations, which indicates the rigid topological coupling between the fermion's spin and momentum. Prospects for further research are discussed in the conclusion.

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Fulltext is also available at DOI: 10.3367/UFNe.2019.10.038669
Keywords: topological insulators, edge state transport, quantum well, inverted energy spectrum
PACS: 73.43.Qt, 73.63.Hs (all)
DOI: 10.3367/UFNe.2019.10.038669
Citation: Kvon Z D, Kozlov D A, Olshanetsky E B, Gusev G M, Mikhailov N N, Dvoretsky S A "Topological insulators based on HgTe" Phys. Usp. 63 629–647 (2020)
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Received: 13th, May 2019, revised: 25th, September 2019, 4th, October 2019

Оригинал: Квон З Д, Козлов Д А, Ольшанецкий Е Б, Гусев Г М, Михайлов Н Н, Дворецкий С А «Топологические изоляторы на основе HgTe» УФН 190 673–692 (2020); DOI: 10.3367/UFNr.2019.10.038669

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