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Interaction effects in the transport and magnetotransport of two-dimensional electrons in AlGaAs/GaAs and Si/SiGe heterojunctions

 a,  b,  a,  c,  a,  b
a Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
b High Magnetic Fields Laboratory, Grenoble, France
c Ioffe Institute, Russian Academy of Sciences, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation

Joint scientific session of the Physical Sciences Division of the Russian Academy of Sciences and the Joint Physical Society of the Russian Federation ’Strongly correlated electrons in two-dimensional systems’ (26 October 2005)

A joint scientific session of the Physical Science Division of the Russian Academy of Sciences and the Joint Physical Society of the Russian Federation was held on 26 October 2006 at the conference room of the Lebedev Physics Institute, RAS. The following reports were presented at the session.
(1) Pudalov V M (Lebedev Physics Institute, RAS) ’Metal-insulator transitions and related phenomena in a strongly correlated two-dimensional electron system’;
(2) Iordanskii S V, Kashuba A (Landau Institute for Theoretical Physics, RAS) ’Two-dimensional multicomponent electron gas as a model for silicon heterostructures’;
(3) Olshanetskii E B (Institute of Semiconductor Physics (ISP), RAS SB, Novosibirsk), Renard V (GHML, MPI-FKF/CNRS, Grenoble, France), Kvon Z D (ISP, RAS SB, Novosibirsk), Gornyi I V (Institut für Nanotechnologie, Karlsruhe, Germany; Ioffe Physical Technical Institute, RAS, St. Petersburg), Toropov A I (ISP, RAS SB, Novosibirsk), Portal J C (GHML, MPI-FKF/CNRS, Grenoble, France) ’Interaction effects in the transport and magnetotransport of two-dimensional electrons in AlGaAs/GaAs and Si/SiGe heterojunctions.’
Summaries of the reports are given below.

Text can be downloaded in Russian. English translation is available on IOP Science.
PACS: 01.10.Fv, 71.27.+a, 71.30.+h, 72.15.Rn (all)
DOI: 10.1070/PU2006v049n02ABEH005923
URL: https://ufn.ru/en/articles/2006/2/h/
Citation: Olshanetskii E B, Renard V, Kvon Z D, Gornyi I V, Toropov A I, Portal J C "Interaction effects in the transport and magnetotransport of two-dimensional electrons in AlGaAs/GaAs and Si/SiGe heterojunctions" Phys. Usp. 49 211–216 (2006)
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Оригинал: Ольшанецкий Е Б, Ренар В, Квон З Д, Горный И В, Торопов А И, Портал Ж К «Эффекты взаимодействия в транспорте и магнитотранспорте двумерных электронов в гетеропереходах AlGaAs/GaAs и Si/SiGe» УФН 176 222–227 (2006); DOI: 10.3367/UFNr.0176.200602g.0222

References (16)

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