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Issue 10, 2024
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Terahertz probing of topological insulators: photoelectric effects

 a,  a, †  a, b
a Lomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation
b Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

The paper presents a review of the possibilities offered by the study of photoelectric effects in 3D topological insulators and a number of other topologically nontrivial materials under terahertz radiation excitation. We show that, in some cases, the information about the electronic states obtained by such experiments is unique.

Typically, an English full text is available in about 1 month from the date of publication of the original article.

Keywords: terahertz radiation, photoelectric effects, photogalvanic effect, photoelectromagnetic effect, photoconductivity
PACS: 72.40.+w, 78.20.−e, 78.56.−a (all)
DOI: 10.3367/UFNe.2023.12.039610
URL: https://ufn.ru/en/articles/2024/10/b/
Citation: Galeeva A V, Kazakov A S, Khokhlov D R "Terahertz probing of topological insulators: photoelectric effects" Phys. Usp. 67 (10) (2024)

Received: 16th, October 2023, revised: 20th, November 2023, 2nd, December 2023

Оригинал: Галеева А В, Казаков А С, Хохлов Д Р «Терагерцовое зондирование топологических изоляторов: фотоэлектрические эффекты» УФН 194 1046–1058 (2024); DOI: 10.3367/UFNr.2023.12.039610

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