RSS feeds
РусскийEnglish
Issue 11, 2024
Volume year page
Issues Authors PACS Subscription For authors

Issues

 / 

2024

 / 

October

←  →

Reviews of topical problems


Terahertz probing of topological insulators: photoelectric effects

 a,  a, †  a, b
a Lomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation
b Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

The paper presents a review of the possibilities offered by the study of photoelectric effects in 3D topological insulators and a number of other topologically nontrivial materials under terahertz radiation excitation. We show that, in some cases, the information about the electronic states obtained by such experiments is unique.

Fulltext pdf (1.7 MB)
Fulltext is also available at DOI: 10.3367/UFNe.2023.12.039610
Keywords: terahertz radiation, photoelectric effects, photogalvanic effect, photoelectromagnetic effect, photoconductivity
PACS: 72.40.+w, 78.20.−e, 78.56.−a (all)
DOI: 10.3367/UFNe.2023.12.039610
URL: https://ufn.ru/en/articles/2024/10/b/
Citation: Galeeva A V, Kazakov A S, Khokhlov D R "Terahertz probing of topological insulators: photoelectric effects" Phys. Usp. 67 988–999 (2024)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Received: 16th, October 2023, revised: 20th, November 2023, 2nd, December 2023

Оригинал: Галеева А В, Казаков А С, Хохлов Д Р «Терагерцовое зондирование топологических изоляторов: фотоэлектрические эффекты» УФН 194 1046–1058 (2024); DOI: 10.3367/UFNr.2023.12.039610

References (63) ↓ Similar articles (20)

  1. Hsieh D et al Nature 452 970 (2008)
  2. Ganichev S D, Prettl W J. Phys. Condens. Matter 15 R935 (2003)
  3. Ivchenko E L Optical Spectroscopy Of Semiconductor Nanostructures (Harrow, UK: Alpha Science, 2005)
  4. Ivchenko E L, Pikus G E Pis’ma ZhETF 27 640 (1978); Ivchenko E L, Pikus G E JETP Lett. 27 604 (1978)
  5. Belinicher V I Phys. Lett. A 66 213 (1978)
  6. Ganichev S, Prettl W Intense Terahertz Excitation Of Semiconductors (Oxford: Oxford Univ. Press, 2005)
  7. Belinicher V I, Sturman B I Usp. Fiz. Nauk 130 415 (1980); Belinicher V I, Sturman B I Sov. Phys. Usp. 23 199 (1980)
  8. Pan Y et al Nat. Commun. 8 1037 (2017)
  9. Olbrich P et al Phys. Rev. Lett. 113 096601 (2014)
  10. Plank H et al J. Appl. Phys. 120 165301 (2016)
  11. Plank H et al Phys. Rev. Mater. 2 024202 (2018)
  12. Plank H, Ganichev S D Solid-State Electron. 147 44 (2018)
  13. Danilov S N et al Phys. Rev. Appl. 16 064030 (2021)
  14. Sun X et al Sci. Adv. 7 eabe5748 (2021)
  15. Wang Y M et al J. Phys. Condens. Matter 31 415702 (2019)
  16. Ando Y J. Phys. Soc. Jpn. 82 102001 (2013)
  17. Zhang H et al Nature Phys. 5 438 (2009)
  18. Xia Y et al Nature Phys. 5 398 (2009)
  19. Chen Y L et al Science 325 178 (2009)
  20. Hsieh D et al Phys. Rev. Lett. 103 146401 (2009)
  21. Bernevig B A, Hughes T L, Zhang S-C Science 314 1757 (2006)
  22. Büttner B et al Nature Phys. 7 418 (2011)
  23. Kvon Z D i dr Pis’ma ZhETF 87 588 (2008); Kvon Z D et al JETP Lett. 87 502 (2008)
  24. Brüne C et al Phys. Rev. Lett. 106 126803 (2011)
  25. Dantscher K-M et al Phys. Rev. B 95 201103 (2017)
  26. Dantscher K-M et al Phys. Rev. B 92 165314 (2015)
  27. Candussio S et al Phys. Rev. Mater. 3 054205 (2019)
  28. Hubmann S et al Phys. Rev. Mater. 4 043607 (2020)
  29. Kikoin I K, Noskov M M Zh. Eksp. Teor. Fiz. 4 123 (1934); Kikoin I K, Noskov M M Phys. Z. Sowjetunion 5 586 (1934)
  30. Kikoin I K, Lazarev S D Usp. Fiz. Nauk 124 597 (1978); Kikoin I K, Lazarev S D Sov. Phys. Usp. 21 297 (1978)
  31. Galeeva A V et al Semicond. Sci. Technol. 31 095010 (2016)
  32. Egorova S G et al Sci. Rep. 5 11540 (2015)
  33. Galeeva A V et al Beilstein J. Nanotechnol. 8 167 (2017)
  34. Galeeva A V et al Nanomaterials 11 3207 (2021)
  35. Dvoretsky S et al J. Electron. Mater. 39 918 (2010)
  36. Varavin V S et al J. Cryst. Growth 159 1161 (1996)
  37. Rogalski A Rep. Prog. Phys. 68 2267 (2005)
  38. Rumyantsev V V i dr Fiz. Tekh. Poluprovodn. 47 1446 (2013); Rumyantsev V V et al Semiconductors 47 1438 (2013)
  39. Kozlov D V i dr Pis’ma ZhETF 113 399 (2021); Kozlov D V et al JETP Lett. 113 402 (2021)
  40. Galeeva A V i dr Pis’ma ZhETF 106 156 (2017); Galeeva A V et al JETP Lett. 106 162 (2017)
  41. Shuvaev A M et al Semicond. Sci. Technol. 27 124004 (2012)
  42. Dziom V et al Nat. Commun. 8 15197 (2017)
  43. Shuvaev A et al Appl. Phys. Lett. 102 241902 (2013)
  44. Shuvaev A M et al Phys. Rev. B 87 121104 (2013)
  45. Brüne C et al Phys. Rev. Lett. 106 126803 (2011)
  46. Ol’shanetskii E B i dr Pis’ma ZhETF 93 584 (2011); Olshanetsky E B et al JETP Lett. 93 526 (2011)
  47. Savchenko M L et al J. Phys. Condens. Matter 35 345302 (2023)
  48. Kvon Z D i dr Usp. Fiz. Nauk 190 673 (2020); Kvon Z D et al Phys. Usp. 63 629 (2020)
  49. Candussio S et al Phys. Rev. Mater. 3 054205 (2019)
  50. Savchenko M L et al Appl. Phys. Lett. 117 201103 (2020)
  51. Shuvaev A M et al Semicond. Sci. Technol. 27 124004 (2012)
  52. Gospodarič J et al Phys. Rev. B 99 115130 (2019)
  53. Mani R G et al Nature 420 646 (2002)
  54. Tomaka G et al Opto-Electron. Rev. 25 188 (2017)
  55. Galeeva A V et al Beilstein J. Nanotechnol. 9 1035 (2018)
  56. Galeeva A V et al Sci. Rep. 10 2377 (2020)
  57. Galeeva A V i dr Fiz. Tekh. Poluprovodn. 54 873 (2020); Galeeva A V et al Semiconductors 54 1064 (2020)
  58. Kazakov A S i dr Pis’ma ZhETF 112 263 (2020); Kazakov A S et al JETP Lett. 112 246 (2020)
  59. Kazakov A S et al Sci. Rep. 11 1587 (2021)
  60. Kazakov A S i dr Pis’ma ZhETF 113 548 (2021); Kazakov A S et al JETP Lett. 113 542 (2021)
  61. Kazakov A S et al Sci. Rep. 11 11638 (2021)
  62. Kazakov A S i dr Izv. RAN. Ser. Fizicheskaya 87 843 (2023); Kazakov A S et al Bull. Russ. Acad. Sci. Phys. 87 739 (2023)
  63. Roth A et al Science 325 294 (2009)
© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions